Photoluminescence Studies of Lateral Composition Modulated Short-Period AlAs/InAs Superlattices

Conference · Sun Jan 03 23:00:00 EST 1999

OSTI ID:2827

Ahrenkiel, S P ^[1]; Follstaedt, D M; Jones, E D; Lee, S R; Mascarenhas, A; Mirecki Millunchick, J; Norman, A G; Reno, J L; Twesten, R D; Zhang, Y

---

1. Sandia National Laboratories

We present low temperature photoluminescence data for a series of spontaneous lateral composition modulation in (AlAs){sub m}/(InAs){sub n} short period superlattices on InP with differing average lattice constants, i.e., varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent In{sub x}Al{sub 1{minus}x}As alloy. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the strength of the composition modulation wave amplitude.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 2827
• Report Number(s): SAND98-1478C
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MODULATION
PHOTOLUMINESCENCE
SUPERLATTICES