skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy

Abstract

Laser irradiated Si(100) surfaces were studied with an ultrahigh vacuum scanning tunneling microscopy system. Our observations indicate that only the dimerized outermost atomic layer is removed if the laser fluence is below the melting threshold at photon energy larger than the band gap. The newly exposed layer, surprisingly, did not have a dimerized atomic structure, but rather, resembled that of a bulk-terminated structure. The uncovered layer remained atomically smooth (no vacancies) even after 90{percent} of the outermost layer was removed. A possible explanation of these observations is that atom removal occurs by a preferential breakage of the atomic bonds in defect sites. When the laser fluence was increased to levels above the melting threshold, extensive surface roughening occurs. {copyright} {ital 1996 American Vacuum Society}

Authors:
; ;  [1]
  1. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6142 (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory
OSTI Identifier:
280140
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 14; Journal Issue: 2; Other Information: PBD: Mar 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; DESORPTION; SORPTIVE PROPERTIES; ROUGHNESS; DIMERS; LASER RADIATION; VACANCIES; SURFACE RECONSTRUCTION; STM

Citation Formats

Xu, J, Overbury, S H, and Wendelken, J F. Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy. United States: N. p., 1996. Web. doi:10.1116/1.589175.
Xu, J, Overbury, S H, & Wendelken, J F. Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy. United States. https://doi.org/10.1116/1.589175
Xu, J, Overbury, S H, and Wendelken, J F. Fri . "Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy". United States. https://doi.org/10.1116/1.589175.
@article{osti_280140,
title = {Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy},
author = {Xu, J and Overbury, S H and Wendelken, J F},
abstractNote = {Laser irradiated Si(100) surfaces were studied with an ultrahigh vacuum scanning tunneling microscopy system. Our observations indicate that only the dimerized outermost atomic layer is removed if the laser fluence is below the melting threshold at photon energy larger than the band gap. The newly exposed layer, surprisingly, did not have a dimerized atomic structure, but rather, resembled that of a bulk-terminated structure. The uncovered layer remained atomically smooth (no vacancies) even after 90{percent} of the outermost layer was removed. A possible explanation of these observations is that atom removal occurs by a preferential breakage of the atomic bonds in defect sites. When the laser fluence was increased to levels above the melting threshold, extensive surface roughening occurs. {copyright} {ital 1996 American Vacuum Society}},
doi = {10.1116/1.589175},
url = {https://www.osti.gov/biblio/280140}, journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 2,
volume = 14,
place = {United States},
year = {1996},
month = {3}
}