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Title: Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy

Abstract

Laser irradiated Si(100) surfaces were studied with an ultrahigh-vacuum scanning tunneling microscopy (STM) system. Our observations indicate that only the dimerized outermost atomic layer is removed if the laser fluence is below the melting threshold with a photon energy larger than the band gap. The newly exposed layer, surprisingly, did not have a dimerized atomic structure, but rather, resembled that of a bulk-terminated structure. The uncovered layer remained atomically smooth (no vacancies) even after 90% of the outermost layer was removed. A possible explanation of these observations is that atom removal occurs by a preferential breakage of the atomic bonds in defect sites. When the laser fluence was increased to levels above the melting threshold, extensive surface roughening occurs.

Authors:
; ;
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
198735
Report Number(s):
CONF-9507225-1
ON: DE96005457
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Conference
Resource Relation:
Conference: Scanning tunneling microscopy (STM) conference, Snowmass, CO (United States), 24-28 Jul 1995; Other Information: PBD: Jul 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; SURFACE PROPERTIES; LASER RADIATION; DESORPTION; LASER-RADIATION HEATING

Citation Formats

Xu, Jun, Overbury, S H, and Wendelken, J F. Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy. United States: N. p., 1995. Web.
Xu, Jun, Overbury, S H, & Wendelken, J F. Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy. United States.
Xu, Jun, Overbury, S H, and Wendelken, J F. Sat . "Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy". United States. https://www.osti.gov/servlets/purl/198735.
@article{osti_198735,
title = {Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy},
author = {Xu, Jun and Overbury, S H and Wendelken, J F},
abstractNote = {Laser irradiated Si(100) surfaces were studied with an ultrahigh-vacuum scanning tunneling microscopy (STM) system. Our observations indicate that only the dimerized outermost atomic layer is removed if the laser fluence is below the melting threshold with a photon energy larger than the band gap. The newly exposed layer, surprisingly, did not have a dimerized atomic structure, but rather, resembled that of a bulk-terminated structure. The uncovered layer remained atomically smooth (no vacancies) even after 90% of the outermost layer was removed. A possible explanation of these observations is that atom removal occurs by a preferential breakage of the atomic bonds in defect sites. When the laser fluence was increased to levels above the melting threshold, extensive surface roughening occurs.},
doi = {},
url = {https://www.osti.gov/biblio/198735}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {7}
}

Conference:
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