Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

doi:https://doi.org/10.1557/JMR.1996.0124

Title: Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

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Abstract

Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190{endash}420{degree}C), ammonia flow relative to TDMAT (0{endash}30), and total gas-flow rate (residence time 0.3{endash}0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N/Ti{lt}0.6{endash}0.75), contained high levels of carbon (C/Ti=0.25{endash}0.40) and oxygen (O/Ti=0.6{endash}0.9), and grew slowly. Small amounts of ammonia (NH{sub 3}/TDMAT{ge}1) brought impurity levels down to C/Ti{lt}0.1 and O/Ti=0.3{endash}0.5. Ammonia increased the growth rates by a factor of 4{endash}12 at temperatures below 400{degree}C. Films 500 A thick had resistivities as low as 1600 {mu}{Omega}-cm when deposited at 280{degree}C and 1500 {mu}{Omega}-cm when deposited at 370{degree}C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations. {copyright} {ital 1996 Materials Research Society.}

Authors:

Musher, J N; Gordon, R G ^[1]

Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138 (United States)

Publication Date:: 1996-04-01

OSTI Identifier:: 280129

Resource Type:: Journal Article

Journal Name:: Journal of Materials Research

Additional Journal Information:: Journal Volume: 11; Journal Issue: 4; Other Information: PBD: Apr 1996

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; TITANIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; THIN FILMS; ORGANIC NITROGEN COMPOUNDS; AMMONIA; STOICHIOMETRY; CHEMICAL COMPOSITION; IMPURITIES; ELECTRIC CONDUCTIVITY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; FLOW RATE; GROWTH RATE; CVD; FILM GROWTH

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                    Musher, J N, and Gordon, R G. Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia.  United States: N. p., 1996. 
        Web.  doi:10.1557/JMR.1996.0124.

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                    Musher, J N, & Gordon, R G. Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia.  United States.  https://doi.org/10.1557/JMR.1996.0124

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                    Musher, J N, and Gordon, R G. Mon .  
        "Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia".  United States.  https://doi.org/10.1557/JMR.1996.0124.

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@article{osti_280129,

  title        = {Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia},

  author       = {Musher, J N and Gordon, R G},

  abstractNote = {Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190{endash}420{degree}C), ammonia flow relative to TDMAT (0{endash}30), and total gas-flow rate (residence time 0.3{endash}0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N/Ti{lt}0.6{endash}0.75), contained high levels of carbon (C/Ti=0.25{endash}0.40) and oxygen (O/Ti=0.6{endash}0.9), and grew slowly. Small amounts of ammonia (NH{sub 3}/TDMAT{ge}1) brought impurity levels down to C/Ti{lt}0.1 and O/Ti=0.3{endash}0.5. Ammonia increased the growth rates by a factor of 4{endash}12 at temperatures below 400{degree}C. Films 500 A thick had resistivities as low as 1600 {mu}{Omega}-cm when deposited at 280{degree}C and 1500 {mu}{Omega}-cm when deposited at 370{degree}C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations. {copyright} {ital 1996 Materials Research Society.}},

  doi          = {10.1557/JMR.1996.0124},

  url          = {https://www.osti.gov/biblio/280129},
  journal      = {Journal of Materials Research},
number       = 4,

  volume       = 11,

  place        = {United States},

  year         = {1996},

  month        = {4}

}

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