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Title: Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

Abstract

Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190{endash}420{degree}C), ammonia flow relative to TDMAT (0{endash}30), and total gas-flow rate (residence time 0.3{endash}0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N/Ti{lt}0.6{endash}0.75), contained high levels of carbon (C/Ti=0.25{endash}0.40) and oxygen (O/Ti=0.6{endash}0.9), and grew slowly. Small amounts of ammonia (NH{sub 3}/TDMAT{ge}1) brought impurity levels down to C/Ti{lt}0.1 and O/Ti=0.3{endash}0.5. Ammonia increased the growth rates by a factor of 4{endash}12 at temperatures below 400{degree}C. Films 500 A thick had resistivities as low as 1600 {mu}{Omega}-cm when deposited at 280{degree}C and 1500 {mu}{Omega}-cm when deposited at 370{degree}C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations. {copyright} {ital 1996 Materials Research Society.}

Authors:
;  [1]
  1. Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138 (United States)
Publication Date:
OSTI Identifier:
280129
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 11; Journal Issue: 4; Other Information: PBD: Apr 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; TITANIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; THIN FILMS; ORGANIC NITROGEN COMPOUNDS; AMMONIA; STOICHIOMETRY; CHEMICAL COMPOSITION; IMPURITIES; ELECTRIC CONDUCTIVITY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; FLOW RATE; GROWTH RATE; CVD; FILM GROWTH

Citation Formats

Musher, J N, and Gordon, R G. Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia. United States: N. p., 1996. Web. doi:10.1557/JMR.1996.0124.
Musher, J N, & Gordon, R G. Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia. United States. https://doi.org/10.1557/JMR.1996.0124
Musher, J N, and Gordon, R G. Mon . "Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia". United States. https://doi.org/10.1557/JMR.1996.0124.
@article{osti_280129,
title = {Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia},
author = {Musher, J N and Gordon, R G},
abstractNote = {Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190{endash}420{degree}C), ammonia flow relative to TDMAT (0{endash}30), and total gas-flow rate (residence time 0.3{endash}0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N/Ti{lt}0.6{endash}0.75), contained high levels of carbon (C/Ti=0.25{endash}0.40) and oxygen (O/Ti=0.6{endash}0.9), and grew slowly. Small amounts of ammonia (NH{sub 3}/TDMAT{ge}1) brought impurity levels down to C/Ti{lt}0.1 and O/Ti=0.3{endash}0.5. Ammonia increased the growth rates by a factor of 4{endash}12 at temperatures below 400{degree}C. Films 500 A thick had resistivities as low as 1600 {mu}{Omega}-cm when deposited at 280{degree}C and 1500 {mu}{Omega}-cm when deposited at 370{degree}C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations. {copyright} {ital 1996 Materials Research Society.}},
doi = {10.1557/JMR.1996.0124},
url = {https://www.osti.gov/biblio/280129}, journal = {Journal of Materials Research},
number = 4,
volume = 11,
place = {United States},
year = {1996},
month = {4}
}