On the origin of stacking faults at the GaAs/ZnSe heterointerface

Journal Article · Thu Feb 29 23:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.115902· OSTI ID:278905

Bourret-Courchesne, E D ^[1]

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1. Center for Advanced Materials (2-200), Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

A series of experiments was designed to assess the effects of the various stages of the nucleation process on the formation of stacking faults at the GaAs/ZnSe interface. Differential interference contrast microscopy was used to image stacking faults and misfit dislocations in 1000 A thick ZnSe layers. We have demonstrated that an As-stabilized GaAs surface is needed to obtain a low density of stacking faults. However, an excess of As favors the formation of stacking faults. More importantly, the introduction of Zn drastically increases the stacking fault density.

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 278905
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 68; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
GALLIUM ARSENIDES
GROWTH
HETEROJUNCTIONS
NUCLEATION
STACKING FAULTS
ZINC SELENIDES