Migration of compensating defects in {ital p}-type ZnSe during annealing
- Center for Advance Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
We annealed {ital p}-type, nitrogen-doped ZnSe grown by molecular-beam epitaxy and subsequently characterized the samples by photoluminescence spectroscopy, capacitance{endash}voltage profiling, and secondary ion mass spectroscopy. We found that the decrease in active acceptor concentration upon annealing stems from compensation by defects that originate from the surface. By fitting the nitrogen acceptor profiles with solutions of the diffusion equation, we estimate the migration energy of the compensating defect to be 4.0{plus_minus}0.3 eV. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 278898
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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