Direct measurement of surface diffusion using atom-tracking scanning tunneling microscopy

Journal Article · Mon Jan 01 04:00:00 EST 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.76.459· OSTI ID:278784

Swartzentruber, B S ^[1]

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1. Surface and Interface Science, MS 1413, Sandia National Laboratories, Albuquerque, New Mexico 87185-1413 (United States)

The diffusion of Si dimers on the Si(001) surface at temperatures between room temperature and 128{degree}C is measured using a novel atom-tracking technique that can resolve every diffusion event. The atom tracker employs lateral-positioning feedback to lock the scanning tunneling microscope (STM) probe tip into position above selected atoms with subangstrom precision. Once locked the STM tracks the position of the atoms as they migrate over the crystal surface. By tracking individual atoms directly, the ability of the instrument to measure dynamic events is increased by a factor of {approximately}1000 over conventional STM imaging techniques. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 278784
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 3 Vol. 76; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
DIFFUSION
DIMERS
ELECTRON MICROSCOPY
MEASURING METHODS
SILICON
STM
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE