Theoretical study of room temperature optical gain in GaN strained quantum wells
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
The determination of gain properties in group III nitride quantum wells is complicated by the incomplete knowledge of band structure properties, and the need for a consistent treatment of many-body Coulomb effects. This letter describes an approach that involves a first-principles band structure calculation, the results of which are incorporated into a microscopic laser theory where many-body Coulomb effects are treated in a consistent manner. Using this approach, we investigate quantum well structures composed of alloys of GaN, AlN, and InN, in particular, GaN{endash}AlInN, which has high confinement potentials in both strained and unstrained configurations. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 277172
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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