Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN

Journal Article · Mon Jan 01 04:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116459· OSTI ID:277136

Zolper, J C; Hagerott Crawford, M; Howard, A J ^[1]; Ramer, J; Hersee, S D ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
2. University of New Mexico, Albuquerque, New Mexico 87131-6081 (United States)

Rapid thermal annealing of GaN in an Ar or N{sub 2} ambient up to 1100{degree}C is shown to improve surface morphology and photoluminescence intensity. For both ambients the average rms surface roughness as determined by atomic force microscopy decreases from {approximately}4 nm on the as-grown material to {approximately}1 nm after a 1100{degree}C anneal. The band-edge luminescence intensity was increased by a factor of 4 after a 1100{degree}C anneal in a N{sub 2} ambient and a factor of 2 for annealing at 1100{degree}C in an Ar ambient as compared to as-grown material. The 1100{degree}C anneal improves the ratio of band edge to deep-level luminescence and also reduces the electron concentration and mobility. The reduction in mobility can be explained in terms of a two-band conduction mechanism where defect band conduction dominates at the lower carrier densities or an increase in the free-carrier compensation ratio. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 277136
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 68; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
DEFECT STATES
ENERGY GAP
GALLIUM NITRIDES
HEAT TREATMENTS
MORPHOLOGY
PHOTOLUMINESCENCE
SURFACE PROPERTIES