The mechanism of iron gettering in boron-doped silicon
- AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
- Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)
High-energy B implantation was used to introduce gettering layers into float-zone Si wafers contaminated with 2{times}10{sup 14} Fe/cm{sup 3}. Secondary ion mass spectrometry shows that about 5{percent} of the Fe contamination is collected at the 4 {mu}m deep peak of a 4{times}10{sup 14}/cm{sup 2}, 3.3 MeV B implant after annealing at 1000{degree}C for 1 h. Deep level transient spectroscopy demonstrates that increasing the gettering B dose from 4{times}10{sup 12} to 4{times}10{sup 14}/cm{sup 2} reduces the Fe concentration from 3{times}10{sup 12} to below {approximately}10{sup 10}/cm{sup 3} in the 1{endash}3 {mu}m deep region from the surface, indicating very efficient gettering. Measurements of the Fe depth profile imply that the depletion of Fe near the gettering layer occurs upon cooling down from 1000{degree}C. The gettering behavior can be qualitatively understood in terms of a Fermi-level-enhanced pairing reaction between Fe and B. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 277133
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 1; Other Information: PBD: Jan 1996
- Country of Publication:
- United States
- Language:
- English
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