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Title: Defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (0 < x < 1) materials and high-Ga-content Cu(In,Ga)Se{sub 2}-based solar cells

Book ·
OSTI ID:276846
; ; ; ; ; ;  [1]
  1. National Renewable Energy Lab., Golden, CO (United States)

Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (0 < x < 1) materials in polycrystalline thin-film form are reported. Also, an energy band alignment between such materials and CdS has been calculated from X-ray photoelectron spectroscopy data. A comparison of some properties against published data on similarly prepared chalcopyrite CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, the authors postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x > 0.3) is due to a relatively inferior character--both structural and electrical--at the very chalcopyrite/defect chalcopyrite interface. They demonstrate that this situation can be circumvented (for absorbers with x > 0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.

OSTI ID:
276846
Report Number(s):
CONF-960513-; TRN: IM9636%%521
Resource Relation:
Conference: 25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996; Other Information: PBD: 1996; Related Information: Is Part Of NREL preprints for the photovoltaic specialists conference of IEEE twenty-five; Gwinner, D. [ed.]; PB: 172 p.
Country of Publication:
United States
Language:
English