Three dimensional amorphous silicon/microcrystalline silicon solar cells

Patent · Tue Jul 23 00:00:00 EDT 1996

OSTI ID:264558

Kaschmitter, J L

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

• Research Organization: Univ. of California (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): US 5,538,564/A/
• Application Number: PAN: 8-214,750
• OSTI ID: 264558
• Resource Relation: Other Information: PBD: 23 Jul 1996
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
DESIGN
AMORPHOUS STATE
CRYSTAL STRUCTURE
OPERATION
FABRICATION
P-TYPE CONDUCTORS
N-TYPE CONDUCTORS
DOPED MATERIALS
CHARGE COLLECTION
ENERGY EFFICIENCY