Three dimensional amorphous silicon/microcrystalline silicon solar cells

Patent · 23 July 1996

OSTI ID:264558

Kaschmitter, J L

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

• Research Organization: University of California
• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): US 5,538,564/A/
• Application Number: PAN: 8-214,750
• OSTI ID: 264558
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
AMORPHOUS STATE
CHARGE COLLECTION
CRYSTAL STRUCTURE
DESIGN
DOPED MATERIALS
ENERGY EFFICIENCY
FABRICATION
N-TYPE CONDUCTORS
OPERATION
P-TYPE CONDUCTORS
SILICON SOLAR CELLS