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Title: Three dimensional amorphous silicon/microcrystalline silicon solar cells

Abstract

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Inventors:
Publication Date:
Research Org.:
University of California
OSTI Identifier:
264558
Patent Number(s):
US 5,538,564/A/
Application Number:
PAN: 8-214,750
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 140501; PA: EDB-96:118272; SN: 96001625914
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 23 Jul 1996
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; DESIGN; AMORPHOUS STATE; CRYSTAL STRUCTURE; OPERATION; FABRICATION; P-TYPE CONDUCTORS; N-TYPE CONDUCTORS; DOPED MATERIALS; CHARGE COLLECTION; ENERGY EFFICIENCY

Citation Formats

Kaschmitter, J.L. Three dimensional amorphous silicon/microcrystalline silicon solar cells. United States: N. p., 1996. Web.
Kaschmitter, J.L. Three dimensional amorphous silicon/microcrystalline silicon solar cells. United States.
Kaschmitter, J.L. Tue . "Three dimensional amorphous silicon/microcrystalline silicon solar cells". United States.
@article{osti_264558,
title = {Three dimensional amorphous silicon/microcrystalline silicon solar cells},
author = {Kaschmitter, J.L.},
abstractNote = {Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 23 00:00:00 EDT 1996},
month = {Tue Jul 23 00:00:00 EDT 1996}
}