TEM sample preparation using FIB: Practical problems and artifacts
Conference
·
OSTI ID:260556
- Inst. of Microelectronics, Singapore (Singapore)
TEM sample preparation using focused ion beam technology has become widely utilized in the semiconductor industry. Common problems or artifacts associated with TEM sample preparation using the focused ion beam technique are reported. Examples of such problems and artifacts observed are given. Based on the qualitative results of the study of some of the problems/artifacts, ways to avoid/minimize them are suggested. Some application examples of this technique for preparing very difficult samples for TEM analysis are described.
- OSTI ID:
- 260556
- Report Number(s):
- CONF-951156-; ISBN 0-87170-554-0; TRN: IM9632%%198
- Resource Relation:
- Conference: ISTFA `95: 21. international symposium for testing and failure analysis, Santa Clara, CA (United States), 5-10 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of ISTFA `95: Conference proceedings; PB: 381 p.
- Country of Publication:
- United States
- Language:
- English
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