Ion beam induced charge (IBIC) imaging for the failure analysis of multi-level metal VLSI circuits
Book
·
OSTI ID:260495
- National Univ. of Singapore (Singapore)
The authors report a new contract mechanism observed in ion beam induced charge images (IBIC) obtained with a focused proton beam of 2 MeV energy. Proton beams of 2 MeV energy can penetrate nearly 50 {micro}m into silicon thus accessing active areas which are otherwise inaccessible with the conventional Electron Beam Induced Current (EBIC) method. EBIC and IBIC images of devices are compared. IBIC images show contrast of unconnected junctions without contrast degradation due to the intervening metal layers.
- OSTI ID:
- 260495
- Report Number(s):
- CONF-951156--; ISBN 0-87170-554-0
- Country of Publication:
- United States
- Language:
- English
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