An Impedance Humidity Sensor Based on CVD Grown WSe2 2D Films

Bhadra, Jolly; Sassi, Lucas M.; Oliveira, Eliezer Fernando; Hachtel, Jordan A.; Parangusan, Hemalatha; Mallick, Shoaib Alam; Ahmad, Zubair; Galvao, Douglas S.; Puthirath, Anand B.; Vajtai, Robert; Ajayan, Pulickel M.; Al-Thani, Noora

doi:10.1021/acsaelm.4c00863

An Impedance Humidity Sensor Based on CVD Grown WSe₂ 2D Films

Journal Article · Thu Oct 17 04:00:00 EDT 2024 · ACS Applied Electronic Materials

DOI:https://doi.org/10.1021/acsaelm.4c00863· OSTI ID:2588261

^[1]; ^[2]; Oliveira, Eliezer Fernando ^[3]; ^[4]; Parangusan, Hemalatha ^[1]; Mallick, Shoaib Alam ^[1]; ^[1]; ^[5]; Puthirath, Anand B. ^[2]; ^[2]; ^[2]; Al-Thani, Noora ^[1]

Qatar University, Doha (Qatar)
Rice University, Houston, TX (United States)
Rice University, Houston, TX (United States); São Paulo State University (Unesp) (Brazil); State University of Campinas, São Paulo (Brazil)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
State University of Campinas, São Paulo (Brazil)

2D materials-based planar devices have been sought after for gas and humidity sensor applications owing to their high sensitivity due to their ultrathin nature and increased surface area. Herein, 2D WSe₂ films-based planner devices were fabricated to evaluate their performance for potential application in humidity sensors. The structure and morphology of the WSe₂ sensing films were studied by Raman spectroscopy, photoluminescence, optical microscopy, and scanning electron microscopy (SEM) techniques. The relative humidity-dependent sensing performances of the 2D WSe₂ films were evaluated using current–voltage (I–V), relative impedance, and complex total impedance (electrochemical impedance spectroscopy, EIS) techniques. This sensor showed a very stable and repeatable performance investigated over the period of 18 months. The response and recovery times of the WSe₂-based impedance sensors were found to be 40 and 30 s, respectively. The WSe₂ sensor exhibits a 2 ± 1% minimum hysteresis at a lower humidity level (50% RH) and around 8 ± 2% maximum hysteresis at relative humidity level (70% RH). This value of hysteresis is in the acceptable range during the initial investigation of any material to explore its potential for application in humidity sensors. The density functional theory (DFT) analysis was performed with the interaction from water molecules of the WSe₂ sample for a better understanding of the sensing mechanism of devices.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE; São Paulo Research Foundation (FAPESP)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2588261

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 11 Vol. 6; ISSN 2637-6113

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

2D- WSe2
Chemical vapor deposition (CVD)
Defects in solids
Density functional theory (DFT)
Electrical properties
Humidity
Humidity sensor
Impedance humidity sensor
Molecules
Response and recovery times
Sensitivity
Sensors

An Impedance Humidity Sensor Based on CVD Grown WSe2 2D Films

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An Impedance Humidity Sensor Based on CVD Grown WSe₂ 2D Films