Review of radiation-induced defects in GaAs

Liu, Xiang-Yang; Singh, Christopher Nolan; Kennedy, Ellis Rae; Huang, Sijay; Fluckey, Stephen Patrick; Matthews, Christopher; Uberuaga, Blas P.

doi:10.1063/5.0279267

Review of radiation-induced defects in GaAs

Journal Article · Mon Aug 18 00:00:00 EDT 2025 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0279267· OSTI ID:2588077

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Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Radiation-resilient optoelectronic materials are highly desired in space and nuclear applications, and understanding the relevant defects and electronic processes in those materials is crucial for both current and next-generation applications. GaAs is a prototypical semiconductor that serves as a foundational system for describing and understanding optoelectronic devices. In this review, both experimental studies and molecular dynamics (MD) simulations of irradiated GaAs are reviewed, with particular emphasis on the deep-level transient spectroscopy, irradiation-induced amorphization zones, and MD predictions of damage structures. The MD results are also compared to predictions of the non-ionized energy-loss model. Recent theoretical studies, in particular, density functional theory based calculations on the simple intrinsic defects and defect clusters in GaAs, are also reviewed. These defects have an important role in dictating the evolution of GaAs in radiation damage environments, as they impact the coupled dynamics of charge carriers. Finally, possible gaps and challenges toward the general understanding of defect evolution in GaAs are discussed.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 2588077

Report Number(s):: LA-UR--25-20417; 10.1063/5.0279267; 1089-7550

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 138; ISSN 0021-8979; ISSN 1089-7550

Publisher:: AIP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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