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Heterostructure engineering for wurtzite LaN

Journal Article · · The Journal of Chemical Physics
DOI:https://doi.org/10.1063/5.0255815· OSTI ID:2587280
 [1];  [2];  [3]
  1. Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Univ. of California, Santa Barbara, CA (United States)
  2. Univ. of California, Santa Barbara, CA (United States); Univ. of South Carolina, Columbia, SC (United States)
  3. Univ. of California, Santa Barbara, CA (United States)
Wurtzite LaN (wz-LaN) is a semiconducting nitride with favorable piezoelectric and ferroelectric properties, making it promising for applications in electronics. Here, we use first-principles density functional theory with a hybrid functional to investigate several features that are key for its use in heterostructures. First, for the purposes of growing wz-LaN on a substrate or designing a heterostructure, we show that it can be lattice-matched with a number of cubic materials along their [111] axes. We also evaluate the bound charge at such interfaces, taking into account both the polarization discontinuity and the piezoelectric polarization due to pseudomorphic strain. Second, we investigate band alignments and assess the results for interfaces with zincblende-, rocksalt-, and perovskite-structure compounds, along with chemically similar wurtzite and rocksalt nitrides. Our results provide guidance for the development of electronic devices based on wz-LaN.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOD; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC52-07NA27344; SC0010689
OSTI ID:
2587280
Report Number(s):
LLNL--JRNL-871853
Journal Information:
The Journal of Chemical Physics, Journal Name: The Journal of Chemical Physics Journal Issue: 19 Vol. 162; ISSN 1089-7690; ISSN 0021-9606
Publisher:
AIP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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