Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

Li, L; Jin, L; Wang, J; Smith, D J; Yin, W J; Yan, Y; Sang, H; Choy, W C. H.; McCartney, M R

doi:10.1002/adma.201103920

Title: Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

Journal Article · Thu Mar 08 00:00:00 EST 2012 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201103920· OSTI ID:1039088

Li, L; Jin, L; Wang, J; Smith, D J; Yin, W J; Yan, Y; Sang, H; Choy, W C. H.; McCartney, M R

Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1039088

Report Number(s):: NREL/JA-5200-54740; TRN: US201209%%151

Journal Information:: Advanced Materials, Vol. 24, Issue 10

Country of Publication:: United States

Language:: English

References (28)

Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots Drexler, H.; Leonard, D.; Hansen, W. Physical Review Letters, Vol. 73, Issue 16 https://doi.org/10.1103/PhysRevLett.73.2252	journal	October 1994
One-dimensional hole gas in germanium/silicon nanowire heterostructures Lu, W.; Xiang, J.; Timko, B. P. Proceedings of the National Academy of Sciences, Vol. 102, Issue 29, p. 10046-10051 https://doi.org/10.1073/pnas.0504581102	journal	July 2005
Observation of Hole Accumulation in Ge/Si Core/Shell Nanowires Using off-Axis Electron Holography Li, Luying; Smith, David J.; Dailey, Eric Nano Letters, Vol. 11, Issue 2 https://doi.org/10.1021/nl1033107	journal	February 2011
Study of hole accumulation in individual germanium quantum dots in p-type silicon by off-axis electron holography Li, Luying; Ketharanathan, Sutharsan; Drucker, Jeff Applied Physics Letters, Vol. 94, Issue 23 https://doi.org/10.1063/1.3154524	journal	June 2009
Twinning superlattices in indium phosphide nanowires Algra, Rienk E.; Verheijen, Marcel A.; Borgström, Magnus T. Nature, Vol. 456, Issue 7220 https://doi.org/10.1038/nature07570	journal	November 2008
Controlled polytypic and twin-plane superlattices in iii–v nanowires Caroff, P.; Dick, K. A.; Johansson, J. Nature Nanotechnology, Vol. 4, Issue 1 https://doi.org/10.1038/nnano.2008.359	journal	November 2008
Bringing order to twin-plane defects Ross, Frances M. Nature Nanotechnology, Vol. 4, Issue 1 https://doi.org/10.1038/nnano.2008.388	journal	January 2009
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures Spirkoska, D.; Arbiol, J.; Gustafsson, A. Physical Review B, Vol. 80, Issue 24 https://doi.org/10.1103/PhysRevB.80.245325	journal	December 2009
Optical Properties of Rotationally Twinned InP Nanowire Heterostructures Bao, Jiming; Bell, David C.; Capasso, Federico Nano Letters, Vol. 8, Issue 3 https://doi.org/10.1021/nl072921e	journal	March 2008
Band Alignment Tuning in Twin-Plane Superlattices of Semiconductor Nanowires Akiyama, Toru; Yamashita, Tomoki; Nakamura, Kohji Nano Letters, Vol. 10, Issue 11 https://doi.org/10.1021/nl1027099	journal	November 2010
Polarization, band lineups, and stability of SiC polytypes Qteish, A.; Heine, Volker; Needs, R. J. Physical Review B, Vol. 45, Issue 12 https://doi.org/10.1103/PhysRevB.45.6534	journal	March 1992
Ab initio study of the spontaneous polarization of pyroelectric BeO Posternak, M.; Baldereschi, A.; Catellani, A. Physical Review Letters, Vol. 64, Issue 15 https://doi.org/10.1103/PhysRevLett.64.1777	journal	April 1990
Band line-ups and band-gap behaviour of new-type superlattices (3C-BN)/(2H-BN), (3C-GaN)/(2H-GaN) and (3C-SiC)/(2H-SiC) Ke, San-huang; Zhang, Kai-ming; Xie, Xi-de Journal of Physics: Condensed Matter, Vol. 8, Issue 49 https://doi.org/10.1088/0953-8984/8/49/012	journal	December 1996
Polytypism and Properties of Silicon Carbide Bechstedt, F.; K�ckell, P.; Zywietz, A. physica status solidi (b), Vol. 202, Issue 1 https://doi.org/10.1002/1521-3951(199707)202:1<35::AID-PSSB35>3.0.CO;2-8	journal	July 1997
Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction Chung, Suk; Smith, David J.; McCartney, Martha R. Microscopy and Microanalysis, Vol. 13, Issue 5 https://doi.org/10.1017/S1431927607070687	journal	September 2007
Absolute measurement of normalized thickness, t/λi, from off-axis electron holography McCartney, M. R.; Gajdardziska-Josifovska, M. Ultramicroscopy, Vol. 53, Issue 3 https://doi.org/10.1016/0304-3991(94)90040-X	journal	March 1994
Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography McCartney, M. R.; Ponce, F. A.; Cai, Juan Applied Physics Letters, Vol. 76, Issue 21 https://doi.org/10.1063/1.126577	journal	May 2000
Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices Ambacher, O.; Dimitrov, R.; Stutzmann, M. physica status solidi (b), Vol. 216, Issue 1 https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<381::AID-PSSB381>3.0.CO;2-O	journal	November 1999
Spontaneous polarization and piezoelectric constants of III-V nitrides Bernardini, Fabio; Fiorentini, Vincenzo; Vanderbilt, David Physical Review B, Vol. 56, Issue 16, p. R10024-R10027 https://doi.org/10.1103/PhysRevB.56.R10024	journal	October 1997
Quantitative measurement of displacement and strain fields from HREM micrographs Hÿtch, M. J.; Snoeck, E.; Kilaas, R. Ultramicroscopy, Vol. 74, Issue 3, p. 131-146 https://doi.org/10.1016/S0304-3991(98)00035-7	journal	August 1998
Electronic dielectric constants of insulators calculated by the polarization method Bernardini, Fabio; Fiorentini, Vincenzo Physical Review B, Vol. 58, Issue 23 https://doi.org/10.1103/PhysRevB.58.15292	journal	December 1998
Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe Strzalkowski, Ireneusz; Joshi, Sharad; Crowell, C. R. Applied Physics Letters, Vol. 28, Issue 6 https://doi.org/10.1063/1.88755	journal	March 1976
Theory of polarization of crystalline solids King-Smith, R. D.; Vanderbilt, David Physical Review B, Vol. 47, Issue 3 https://doi.org/10.1103/PhysRevB.47.1651	journal	January 1993
Macroscopic polarization in crystalline dielectrics: the geometric phase approach Resta, Raffaele Reviews of Modern Physics, Vol. 66, Issue 3 https://doi.org/10.1103/RevModPhys.66.899	journal	July 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Triple-Crystal Zinc Selenide Nanobelts Liu, S. Y.; Choy, Wallace C. H.; Jin, L. The Journal of Physical Chemistry C, Vol. 111, Issue 26 https://doi.org/10.1021/jp0704160	journal	July 2007
Twinning mediated growth of ZnSe tri- and bi-crystal nanobelts with single crystalline wurtzite nanobelts as building blocks Jin, Lei; Wang, Jianbo; Jia, Shuangfeng CrystEngComm, Vol. 12, Issue 1 https://doi.org/10.1039/B914542G	journal	January 2010

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Title: Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

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