High-rate deposition of ultrathick bismuth films by direct-current magnetron sputtering

Goodelman, Daniel C.; Taylor, Gregory V.; Kim, Eunjeong; Stafford, Maxwell J.; Qu, Dong Xia; Pendse, Aaditya; Shin, Swanee J.; Kucheyev, Sergei O.; Bayu Aji, Leonardus Bimo

doi:10.1016/j.vacuum.2025.114385

High-rate deposition of ultrathick bismuth films by direct-current magnetron sputtering

Journal Article · Mon May 26 00:00:00 EDT 2025 · Vacuum

DOI:https://doi.org/10.1016/j.vacuum.2025.114385· OSTI ID:2585342

^[1]; ^[1]; Kim, Eunjeong ^[1]; Stafford, Maxwell J. ^[1]; ^[1]; Pendse, Aaditya ^[1]; ^[1]; Kucheyev, Sergei O. ^[1]; Bayu Aji, Leonardus Bimo ^[1]

Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Bismuth coatings deposited at room temperature by physical vapor deposition typically feature irregularly-shaped grains and a high density of voids, thereby preventing their use in many potential applications. Here, we demonstrate the deposition of low-stress, high-density 40-μm-thick Bi films by systematically studying the effect of the deposition rate and substrate tilt on the properties of Bi films deposited at room temperature by direct-current magnetron sputtering. Furthermore, results show that, with increasing deposition rate, the morphology, structure, and properties of Bi films greatly improve, while an increase in substrate tilt leads to a monotonic decrease in film thickness, density, and electrical conductivity.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 2585342

Report Number(s):: LLNL--JRNL-2005095

Journal Information:: Vacuum, Journal Name: Vacuum Vol. 239; ISSN 0042-207X

Publisher:: Elsevier BVCopyright Statement

Country of Publication:: United States

Language:: English

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