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Strain-dependent insulating state and Kondo effect in epitaxial SrIrO3 films

Journal Article · · Physical Review Materials

The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. Here, in this Letter, we study the role of epitaxial strain on the electronic behavior of thin SrIrO3 films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO3 into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); National Science Foundation (NSF)
Grant/Contract Number:
SC0023478; AC02-06CH11357
OSTI ID:
2569716
Alternate ID(s):
OSTI ID: 2474629
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 7 Vol. 8; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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