Efficiency droop contributors in InGaN green light emitting diodes

Thirasuntrakul, P.; Li, J.; Lee, J.; Chiu, Y. C.; Bayram, C.

doi:10.1063/5.0272756

Efficiency droop contributors in InGaN green light emitting diodes

Journal Article · Tue May 27 00:00:00 EDT 2025 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0272756· OSTI ID:2568477

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University of Illinois Urbana-Champaign, IL (United States)
University of Illinois Urbana-Champaign, IL (United States); Innovative COmpound semiconductoR LABoratory (ICORLAB), Urbana, IL (United States)

Here, efficiency droop contributors (i.e., inherent Auger–Meitner recombination, polarization-induced effects, thermal effects, and light extraction) in InGaN green light emitting diodes (LEDs) are decoupled and quantified. First, a modified ABC model is developed, and external quantum efficiency measurements are taken under constant and pulsed currents (⁠ EQE_Constant and EQE_Pulsed⁠, respectively). The LED internal quantum efficiency with and without thermal effects (⁠ IQE$$^{ABC}_{Constant}$$ and IQE$$^{ABC}_{Pulsed}$$⁠, respectively) is extracted using the modified model. Then, using Raman spectroscopy, the LED junction temperature is extracted. Finally, using the optical-electrical model (OEM), the polarization- and temperature-independent LED internal quantum efficiency (⁠ IQE^OEM) is calculated from the modified ABC model and the extracted junction temperature. By comparing external (⁠ EQE_Constant⁠) and the three internal quantum efficiencies (⁠ IQE$$^{ABC}_{Constant}$$, IQE$$^{ABC}_{Pulsed}$$⁠, and IQE^OEM), the impacts of inherent Auger–Meitner recombination, polarization-induced effects, thermal effects, and light extraction on the efficiency droop are decoupled and quantified. It is found that inherent Auger–Meitner recombination-induced droop is approximately 49% of the total efficiency droop in commercial green LEDs, while polarization-induced effects contribute about 35%, and thermal droop accounts for nearly 16%. Lastly, these findings suggest, to quash the green gap, it is critical to search for materials and device designs with low inherent Auger–Meitner coefficients and polarization fields, respectively.

View Accepted Manuscript (DOE)

Research Organization:: University of Illinois Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); Office of Naval Research (ONR); Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AR0001558

OSTI ID:: 2568477

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 126; ISSN 1077-3118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
Charge recombination
Electroluminescence
Junction temperature
Light emitting diodes
Polarization
Quantum efficiency
Quantum wells
Raman spectroscopy

Efficiency droop contributors in InGaN green light emitting diodes

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