Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

Journal Article · Wed Jun 15 04:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4954296· OSTI ID:22611522

Fu, Houqiang; Lu, Zhijian; Zhao, Yuji ^[1]

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1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 (United States)

We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n{sub 0}), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carrier lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.

• OSTI ID: 22611522
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 6 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER DENSITY
CARRIER LIFETIME
CARRIERS
COMPARATIVE EVALUATIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
LIGHT EMITTING DIODES
NITROGEN COMPOUNDS
PHASE SPACE
QUANTUM EFFICIENCY
QUANTUM WELLS
REACTION KINETICS
SIMULATION
STARK EFFECT
THICKNESS
VISIBLE RADIATION