Formation of high-quality nitrided silicon dioxide films using electron-cyclotron resonance chemical vapor deposition with nitrous oxide and silane

Journal Article · Wed May 01 04:00:00 EDT 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836699· OSTI ID:256824

Landheer, D; Tao, Y; Hulse, J E; Quance, T; Xu, D X ^[1]

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1. National Research Council of Canada, Ottawa, Ontario (Canada). Inst. for Microstructural Sciences

High-quality silicon dioxide films with nitrogen at the Si/SiO{sub 2} interface have been produced by plasma-enhanced chemical vapor deposition using an electron-cyclotron resonance source with silane and nitrous oxide. The nitride layer, which amounts to approximately one monolayer, is produced by a plasma nitridation process that dominates over chemical vapor deposition during the initial stages of growth. X-ray photoelectron spectroscopy has been used to show that the nitrogen atoms are bonded to three silicon atoms and the N-O bond concentration is below the detection limit. Fourier transform infrared spectroscopy indicates that the films have excellent bulk properties. Interface state densities of 2 {times} 10{sup 11} e/V cm{sup 2} have been obtained by capacitance-voltage analysis of aluminum capacitors. The authors discuss the prospects for reducing this level by optimizing the process.

• Sponsoring Organization: USDOE
• OSTI ID: 256824
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 5 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
NITROUS OXIDE
OPTIMIZATION
SILANES
SILICON NITRIDES
SILICON OXIDES