Record performance in intrinsic, impurity-free lateral diamond photoconductive semiconductor switches

Han, Zhuoran; Lee, Jaekwon; Mazumder, Anik; Elly, Hubert; Messing, Stephen; Mironov, Andrey; Bayram, Can

doi:10.1063/5.0266565

Record performance in intrinsic, impurity-free lateral diamond photoconductive semiconductor switches

Journal Article · Mon Apr 14 04:00:00 EDT 2025 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0266565· OSTI ID:2555723

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University of Illinois at Urbana-Champaign, IL (United States)

Photoconductive semiconductor switches (PCSSs) are fabricated on type IIa diamond substrates with varying boron and nitrogen impurity levels (<10¹⁴–10¹⁶ cm^–3). The photoresponse of lateral PCSS is reported over the incident laser wavelength range (212–240 nm), energy per pulse (5–65 μJ), and DC bias (–1.2 to +1.2 kV). The PCSS device with the lowest boron and nitrogen impurity concentration achieves the highest normalized responsivity of 9.1 × 10^–8 A-cm/W-V, peak photocurrent of 8.0 A, and on/off ratio of 2.3 × 10¹¹ at a DC bias of +1.2 kV with the potential for even higher currents at increased DC bias. All PCSS display fast rise times (<3 ns), limited by the laser's rise time. However, photoresponse measurements reveal that higher impurity levels reduce the photocurrent and decrease the on/off ratio. Furthermore, these results highlight the performance advantages of using low background concentration type IIa diamond substrates for PCSS fabrication and present a promising route toward advanced high-power, high-speed diamond-based switches.

View Accepted Manuscript (DOE)

Research Organization:: University of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); U.S. Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AR0001846

OSTI ID:: 2555723

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 126; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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