Type-I and type-II interfaces in a MoSe2/WS2 van der Waals heterostructure

Rafizadeh, Neema; Agunbiade, Gbenga; Scott, Ryan J.; Vieux, Monique; Zhao, Hui

doi:10.1063/5.0253709

Type-I and type-II interfaces in a MoSe₂/WS₂ van der Waals heterostructure

Journal Article · Mon Jan 27 00:00:00 EST 2025 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0253709· OSTI ID:2551845

^[1]; ^[2]; ^[2]; Vieux, Monique ^[2]; ^[2]

University of Kansas, Lawrence, KS (United States); The University of Kansas
University of Kansas, Lawrence, KS (United States)

We report experimental evidence that MoSe₂ and WS₂ allow the formation of type-I and type-II interfaces, according to the thickness of the former. Heterostructure samples are obtained by stacking a monolayer WS₂ flake on top of a MoSe₂ flake that contains regions of thickness from one to four layers. Photoluminescence spectroscopy and transient absorption measurements reveal a type-II interface in the regions of monolayer MoSe₂ in contact with monolayer WS₂. In other regions of the heterostructure formed by multilayer MoSe₂ and monolayer WS₂, features of type-I interface are observed, including the absence of charge transfer and dominance of intralayer excitons in MoSe₂. Furthermore, the coexistence of type-I and type-II interfaces in a single heterostructure offers opportunities to design sophisticated two-dimensional materials with finely controlled photocarrier behaviors.

View Accepted Manuscript (DOE)

Research Organization:: University of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: U.S. National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: SC0020995

OSTI ID:: 2551845

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 126; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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