Ultrafast charge transfer and carrier dynamics in a WS2/MoSe2 few-layer van der Waals heterostructure

Bian, Ang; Fu, Shaohua; Wang, Pengzhi; Zhao, Kun; He, Jiaqi; Zhang, Xiaoxian; He, Dawei; Wang, Yongsheng; Zhao, Hui

doi:10.1039/d1tc05584d

Ultrafast charge transfer and carrier dynamics in a WS₂/MoSe₂ few-layer van der Waals heterostructure

Journal Article · Mon Feb 28 00:00:00 EST 2022 · Journal of Materials Chemistry C

DOI:https://doi.org/10.1039/d1tc05584d· OSTI ID:1864722

^[1]; Fu, Shaohua ^[2]; ^[2]; Zhao, Kun ^[2]; ^[3]; Zhang, Xiaoxian ^[2]; He, Dawei ^[2]; Wang, Yongsheng ^[2]; ^[4]

Beijing Jiaotong Univ. (China); The University of Kansas
Beijing Jiaotong Univ. (China)
Beijing Univ. of Chemical Technology (China)
Univ. of Kansas, Lawrence, KS (United States)

Photocarrier dynamics including interlayer charge transfer and intralayer valley scattering are studied in a heterostructure formed by trilayer WS₂ and MoSe₂. The sample is fabricated by mechanical exfoliation and dry transfer and characterized by atomic force microscopy, Raman spectroscopy, and photoluminescence measurements. The conduction band minima of the two materials are nearly degenerate, representing a unique band alignment. Layer-selective pump–probe measurements are performed with three configurations to reveal a complete picture of the photocarrier dynamics. By comparing the heterostructure with the two individual trilayer materials in each experimental configuration, ultrafast interlayer charge transfer is unambiguously observed, which occurs on the same time scale as the intralayer valley scattering of the photocarriers. The quasi-equilibrium distribution of electrons in the two layers mediate the fast carrier recombination process. Furthermore, these results show that the band structures of the few-layer transition metal dichalcogenides can enable rich photocarrier dynamics with intermediate band alignments that are complementary to the previously studied monolayer–monolayer heterostructures.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0020995

OSTI ID:: 1864722

Alternate ID(s):: OSTI ID: 1854058

Journal Information:: Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 13 Vol. 10; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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