|
Properties of Semiconductor Alloys: Group‐IV, III–V and II–VI Semiconductors
|
book
|
January 2009 |
|
Handbook of Nitride Semiconductors and Devices; GaN‐Based Optical and Electronic Devices
|
book
|
October 2008 |
|
Piezoelectric‐Polarization‐Enhanced Photovoltaic Performance in Depleted‐Heterojunction Quantum‐Dot Solar Cells
|
journal
|
November 2012 |
|
Recent Progress in Micro‐LED‐Based Display Technologies
|
journal
|
April 2022 |
|
Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
|
journal
|
January 2006 |
|
Dielectric function and critical points of the band structure for AlGaN alloys
|
journal
|
October 2005 |
|
Band Structure and Reflectivity of GaN
|
journal
|
November 1974 |
|
Optical Properties of Crystalline and Amorphous Semiconductors
|
book
|
January 1999 |
|
III-Nitrides Light Emitting Diodes: Technology and Applications
|
book
|
January 2020 |
|
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
|
journal
|
August 2013 |
|
Transfer matrix method for calculating UV–Vis reflectivity/transmission spectra to assess thickness of nanostructured zb CdSe and ZnSe films grown on GaAs (001)
|
journal
|
December 2022 |
|
Optical constants of indium nitride
|
journal
|
September 1992 |
|
Optical properties of indium nitride in vacuum ultraviolet region
|
journal
|
May 1996 |
|
The optical properties and electronic transitions of cubi and hexagonal GaN films between 1.5 and 10 eV
|
journal
|
January 1995 |
|
Enhanced dielectric contrast in scattering-type scanning near-field optical microscopy
|
journal
|
August 2000 |
|
Thermal stability of InN epilayers grown by high pressure chemical vapor deposition
|
journal
|
March 2013 |
|
Ab-initio study of electronic and optical properties of InN in wurtzite and cubic phases
|
journal
|
December 2010 |
|
Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire
|
journal
|
November 2014 |
|
Anisotropy of the dielectric function for wurtzite InN
|
journal
|
October 2004 |
|
Density Functional Theory-Fed Phase Field Model for Semiconductor Nanostructures: The Case of Self-Induced Core–Shell InAlN Nanorods
|
journal
|
May 2024 |
|
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
|
journal
|
March 2018 |
|
Nanoscopy of Phase Separation in In x Ga 1– x N Alloys
|
journal
|
August 2016 |
|
Origin of the Inhomogeneous Electroluminescence of GaN-Based Green Mini-LEDs Unveiled by Microscopic Hyperspectral Imaging
|
journal
|
October 2022 |
|
Improved Structural and Chemical Properties of Nearly Lattice-Matched Ternary and Quaternary Barriers for GaN-Based HEMTs
|
journal
|
June 2011 |
|
Semiconductor Nanowire Optical Antenna Solar Absorbers
|
journal
|
February 2010 |
|
Nanoscale Infrared Absorption Spectroscopy of Individual Nanoparticles Enabled by Scattering-Type Near-Field Microscopy
|
journal
|
July 2011 |
|
Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy
|
journal
|
January 2018 |
|
Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
|
journal
|
June 1997 |
|
The effect of strain-induced polarization fields on impact ionization in a multiquantum-well structure
|
journal
|
November 1998 |
|
Indium segregation in InGaN quantum-well structures
|
journal
|
March 2000 |
|
Small band gap bowing in In1−xGaxN alloys
|
journal
|
June 2002 |
|
Indium nitride (InN): A review on growth, characterization, and properties
|
journal
|
September 2003 |
|
Band parameters for nitrogen-containing semiconductors
|
journal
|
September 2003 |
|
Density-functional theory band gap of wurtzite InN
|
journal
|
June 2005 |
|
Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy
|
journal
|
July 2007 |
|
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
|
journal
|
August 2007 |
|
Growth of ZnSe(1−x)Tex epilayers by isothermal closed space sublimation
|
journal
|
May 2010 |
|
Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure
|
journal
|
May 2010 |
|
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
|
journal
|
April 2011 |
|
Optical properties of hexagonal GaN
|
journal
|
October 1997 |
|
Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
|
journal
|
December 2011 |
|
Modeling the optical constants of hexagonal GaN, InN, and AlN
|
journal
|
March 1999 |
|
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
|
journal
|
April 2012 |
|
Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures
|
journal
|
July 2013 |
|
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
|
journal
|
December 2014 |
|
Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy
|
journal
|
July 2015 |
|
Surface morphology of GaN nucleation layer grown by MOCVD with different carrier gas
|
journal
|
July 2018 |
|
Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes
|
journal
|
January 2021 |
|
Measurement and analysis of photoluminescence in GaN
|
journal
|
March 2021 |
|
Energy diagram and parameters regarding localized states in InGaN/GaN nanocolumns
|
journal
|
October 2021 |
|
Exciton distribution-induced efficiency droop in green microscale light-emitting diodes at cryogenic temperatures
|
journal
|
November 2022 |
|
A red-emitting micrometer scale LED with external quantum efficiency >8%
|
journal
|
April 2023 |
|
Low temperature absolute internal quantum efficiency of InGaN-based light-emitting diodes
|
journal
|
February 2023 |
|
Thickness measurement and optical properties of very thin ZnxCd(1 x)Te layers
|
journal
|
December 2001 |
|
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
|
journal
|
August 2007 |
|
Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE
|
journal
|
January 2011 |
|
A review of III–V nanowire infrared photodetectors and sensors
|
journal
|
February 2017 |
|
Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE
|
journal
|
May 2021 |
|
Recent progress in red light-emitting diodes by III-nitride materials
|
journal
|
November 2021 |
|
Peculiarities of the structural properties of InxGa1-xN polytype nanostructures grown by molecular-beam epitaxy
|
journal
|
March 2020 |
|
Determination of the Optical Properties of ZnSe Thin Films Using the Transfer Matrix Method
|
journal
|
April 2014 |
|
The micro-LED roadmap: status quo and prospects
|
journal
|
October 2023 |
|
Reflectivity of Semiconductors with Wurtzite Structure
|
journal
|
February 1963 |
|
10-30-eV optical properties of GaN
|
journal
|
October 1981 |
|
Modeling the optical dielectric function of semiconductors: Extension of the critical-point parabolic-band approximation
|
journal
|
May 1992 |
|
UV reflectivity of GaN: Theory and experiment
|
journal
|
May 1995 |
|
Spontaneous polarization and piezoelectric constants of III-V nitrides
|
journal
|
October 1997 |
|
Carrier-induced refractive index change and optical absorption in wurtzite InN and GaN: Full-band approach
|
journal
|
April 2010 |
|
Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
|
journal
|
November 2011 |
|
Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy
|
journal
|
April 2009 |
|
Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH 3 /H 2 System: A Computational Fluid Dynamics Simulation Study
|
journal
|
February 2005 |
|
Rietveld refinement for indium nitride in the 105–295 K range
|
journal
|
June 2003 |
|
Indium Nitride and Related Alloys
|
book
|
January 2009 |
|
“W-shaped” injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate
|
journal
|
August 2017 |
|
Red, green and blue InGaN micro-LEDs for display application: temperature and current density effects
|
journal
|
September 2022 |
|
Efficient emission of InGaN-based light-emitting diodes: toward orange and red
|
journal
|
January 2020 |
|
630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays
|
journal
|
August 2021 |
|
Sur le symbolisme des groupes de repetition on de symetrie des assemblages cristallins
|
journal
|
December 1931 |
|
An Insight Analysis of In0.7Ga0.3N Based pn Homo-Junction Solar Cell using SCAPS-1D Simulation Software
|
journal
|
December 2023 |
|
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes
|
journal
|
September 2021 |
|
Microhardness, Young’s and Shear Modulus in Tetrahedrally Bonded Novel II-Oxides and III-Nitrides
|
journal
|
January 2025 |
|
Analyzing Structural Optical and Phonon Characteristics of Plasma-Assisted Molecular-Beam Epitaxy-Grown InN/Al2O3 Epifilms
|
journal
|
February 2025 |