Surface diffusion of In on Si(111): Evidence for surface ionization effects

Journal Article · Mon Jan 01 04:00:00 EST 1996 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.579925· OSTI ID:253463

Allen, C E; Ditchfield, R; Seebauer, E G ^[1]

---

1. Department of Chemical Engineering, University of Illinois, Urbana, Illinois 61801 (United States)

Second harmonic microscopy has been used to quantify the surface diffusion of In on Si(111). At temperatures near 50{percent} of the bulk melting temperature and in the coverage range 0{much_gt}{theta}{much_gt}0.7, the activation energy {ital E}{sub diff} and pre-exponential factor {ital D}{sub 0} lie at 42{plus_minus}0.5 kcal/mol and 3{times}10{sup 3{plus_minus}0.3} cm{sup 2}/s, respectively. These parameters, which are quite large, are explained semiquantitatively by reference to an adatom{endash}vacancy model recently developed for related systems. The present work, when compared with the results of these other systems, offers significant evidence for the effects of adatom{endash}vacancy ionization. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 253463
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 1 Vol. 14; ISSN JVTAD6; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ATOM TRANSPORT
DIFFUSION
INDIUM
IONIZATION
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K