Surface diffusion of Sb on Si(111) measured by second harmonic microscopy

Journal Article · Sun Jan 01 04:00:00 EST 1995 · Langmuir; (United States)

DOI:https://doi.org/10.1021/la00001a032· OSTI ID:6628836

Allen, C E; Seebauer, E G ^[1]

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1. Univ. of Illinois, Urbana, IL (United States)

Surface diffusion of Sb on Si(111) has been studied by second harmonic microscopy, which uses surface second harmonic generation to monitor surface concentration profiles with a 3 [mu]m spatial resolution. At temperatures near 55% of the bulk melting point and in the coverage range 0 < [theta] < 0.12, the activation energy, E[sub diff], and pre-exponential factor, D[sub 0], were found to be 60 [+-] 3 kcal/mol and 6 x 10[sup 3+0.7] cm[sup 2]/s, respectively. The high prefactor and activation energy indicate that the surface diffusion is governed by a recently developed adatom-vacancy mechanism. 38 refs., 4 figs., 1 tab.

• OSTI ID: 6628836
• Journal Information: Langmuir; (United States), Journal Name: Langmuir; (United States) Vol. 11:1; ISSN LANGD5; ISSN 0743-7463
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360600 -- Other Materials
360606 -- Other Materials-- Physical Properties-- (1992-)
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical &amp; Physicochemical Properties
ABUNDANCE
ACTIVATION ENERGY
ANTIMONY
DIFFUSION
ELEMENTS
ENERGY
METALS
MICROSCOPY
OPTICAL MICROSCOPY
SEMIMETALS
SILICON
SURFACE PROPERTIES