Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Evaluation of Converter Performance Considering Static and Dynamic Device Part-to-Part Variability

Conference ·
This paper presents a methodology to incorporate and analyze the impact of semiconductor device part-to-part variation on power converter performance. By integrating extensive static and dynamic device characterization data with an automated compact model generation process that reflects manufacturing variability, device models with inherent variability features are utilized in converter simulations for a comprehensive assessment of performance impacts. The traditional converter performance evaluation process typically yields fixed efficiency values, often dismissing the inherent part-to-part variability caused by the manufacturing process of semiconductor devices. To address this limitation, a large population of devices was characterized to capture variations in static parameters-such as transfer, output, and capacitance characteristics-as well as dynamic behaviors, including switching losses. This data-driven approach enables the development of individual compact models, which were then integrated into converter simulations to evaluate efficiency ranges rather than single point estimated values. The converter simulation results show that part-to-part component variation can lead to significant efficiency deviations, exceeding several percentage points in high-power conversion applications. By offering a more accurate representation of converter behavior under real-world manufacturing conditions, this methodology enables designers to anticipate performance variability, improving the robustness of power converter designs.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Grid Modernization Laboratory Consortium (GMLC)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
2526559
Report Number(s):
NREL/CP-5D00-93590; MainId:95372; UUID:a223c779-45d8-4e5d-ba12-8ed9111b0529; MainAdminId:76254
Country of Publication:
United States
Language:
English

References (24)

An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model journal June 2010
A Survey of Wide Bandgap Power Semiconductor Devices journal May 2014
Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures journal November 2024
Quantifying Variability of Batching Equipment Using Effective Process Times journal May 2006
Accurate Transient Calorimetric Measurement of Soft-Switching Losses of 10-kV SiC mosfets and Diodes journal June 2018
A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs journal January 2022
Improved Double Pulse Test for Accurate Dynamic Characterization of Medium Voltage SiC Devices journal February 2023
Miller Capacitance Cancellation to Improve SiC MOSFET's Performance in a Phase-Leg Configuration journal December 2021
Static and dynamic characterization of large-area high-current-density SiC Schottky diodes journal January 2001
Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies journal February 2010
Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling conference June 2022
Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness journal May 2003
An assessment of wide bandgap semiconductors for power devices journal May 2003
Screening process-based modeling of the multi-cell battery string in series and parallel connections for high accuracy state-of-charge estimation journal August 2013
A Practical Switching Loss Model for Buck Voltage Regulators journal March 2009
Improved SiC MOSFET Model Considering Channel Dynamics of Transfer Characteristics journal January 2023
Methodology for Wide Band-Gap Device Dynamic Characterization journal December 2017
Identification of Statistical Distributions for Cycle Time in Wafer Fabrication journal February 2017
Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge journal April 2019
Machine Learning Based Non-Intrusive Inspection Technique to Quantify GaN HEMT Characteristics conference September 2023
A Robust Control for D-STATCOM Under Variations of DC-Link Capacitance journal July 2021
A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications journal October 2017
Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters journal March 2016
Stable Configuration of a Li-Ion Series Battery Pack Based on a Screening Process for Improved Voltage/SOC Balancing journal January 2012

Similar Records

CFD Study of Impact of Part-to-Part Variations on Spark-Ignition Engine Charge Formation
Technical Report · Wed Feb 13 23:00:00 EST 2019 · OSTI ID:1496042

A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
Journal Article · Thu Dec 20 23:00:00 EST 2018 · IEEE Transactions on Power Electronics · OSTI ID:1557400

Transient simulation of integrated AC/DC systems. Part I: Converter modeling and simulation
Journal Article · Sun Jan 31 23:00:00 EST 1988 · IEEE Trans. Power Syst.; (United States) · OSTI ID:7102250