NiO exchange bias layers grown by direct ion beam sputtering of a nickel oxide target

Technical Report · Fri Mar 01 04:00:00 EST 1996

DOI:https://doi.org/10.2172/251367· OSTI ID:251367

Michel, R P; Chaiken, A; Johnson, L E ^[1]; Kim, Y K ^[2]

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1. Lawrence Livermore National Lab., CA (United States)
2. Quantum Peripherals Colorado Inc., Louisville, CO (United States)

A new process for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 251367
• Report Number(s): UCRL-JC--122960; CONF-960425--10; ON: DE96010365
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPOSITE MATERIALS
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
IRON ALLOYS
LAYERS
MAGNETIC PROPERTIES
NICKEL ALLOYS
NICKEL OXIDES