Cryogenic Front-End ASICs for Low-Noise Readout of Charge Signals

Mukim, Prashansa; Carini, Gabriella A.; Chen, Hucheng; Deptuch, Grzegorz W.; Gao, Shanshan; Geronimo, Gianluigi De; Mandal, Soumyajit; Manyam, Venkata Narasimha; Radeka, Veljko; Rescia, Sergio

doi:10.1109/tcsi.2024.3506828

Cryogenic Front-End ASICs for Low-Noise Readout of Charge Signals

Journal Article · Mon Dec 09 00:00:00 EST 2024 · IEEE Transactions on Circuits and Systems I: Regular Papers

DOI:https://doi.org/10.1109/tcsi.2024.3506828· OSTI ID:2500294

Mukim, Prashansa ^[1]; Carini, Gabriella A. ^[1]; Chen, Hucheng ^[1]; Deptuch, Grzegorz W. ^[1]; Gao, Shanshan ^[1]; Geronimo, Gianluigi De ^[1]; Mandal, Soumyajit ^[1]; Manyam, Venkata Narasimha ^[1]; Radeka, Veljko ^[1]; Rescia, Sergio ^[1]

Brookhaven National Laboratory (BNL), Upton, NY (United States)

This paper presents design details and measurement results of LArASIC, a front-end application specific integrated circuit (ASIC) designed for low-noise readout of charge signals generated in neutrino study experiments within liquid argon time projection chambers. LArASIC comprises of 16-channels of programmable charge amplification and pulse shaping stages that provide a voltage readout proportional to the input charge and was optimized for operation at liquid argon temperature, i.e., 89 K. The chip was fabricated in a 180 nm CMOS process. Measurements at liquid nitrogen temperature, i.e., 77 K, indicate that the channel outputs have high linearity (INL < 0.1%) within the operating range, an equivalent noise charge of 534 electrons for a peaking time of 1 µs and a detector capacitance of 150 pF, and a worst-case inter-channel cross-talk of 0.35%. The paper also presents design choices made in the process of migrating LArASIC to CHARMS, an ASIC to be fabricated in a 65 nm process that includes all features provided by LArASIC, along with additional digital programmability for improved robustness and flexibility. CHARMS is intended for use in future high-energy physics experiments that require high-resolution charge or light readout with shorter pulse peaking times.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 2500294

Report Number(s):: BNL--226481-2025-JAAM

Journal Information:: IEEE Transactions on Circuits and Systems I: Regular Papers, Journal Name: IEEE Transactions on Circuits and Systems I: Regular Papers Journal Issue: 4 Vol. 72; ISSN 1549-8328

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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