Magnetron reactive ion etching of GaAs in a BCl{sub 3} discharge

Journal Article · Mon Mar 01 04:00:00 EST 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586679· OSTI ID:249834

McLane, G F; Lee, H S; Cole, M W; Eckart, D W; Lareau, R T ^[1]; Meyyappan, M ^[2]

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1. Army Research Lab., Fort Monmouth, NJ (United States)
2. Scientific Research Associates, Glatonbury, CT (United States); and others

Magnetron reactive ion etching (MIE) of GaAs has been investigated using BCl{sub 3} as the etch gas. Etch rates are determined as a function of applied power density (0.16-0.80 W/cm{sup 2}) and chamber pressure (2-6 mTorr). Patterned GaAs samples were etched anisotropically and exhibited smooth surfaces, with no indication of residues on surfaces or sidewalls. Transmission electron microscope measurements were performed to determine etch induced wafer damage. Schottky diode measurements on etched surfaces revealed minimal degradation of surface region electrical properties. Our results show that (MIE) in BCl{sub 3} is an attractive processing technique for GaAs device fabrication. 8 refs., 5 figs., 1 tab.

• OSTI ID: 249834
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 2 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
BORON CHLORIDES
ELECTRICAL PROPERTIES
ETCHING
GALLIUM ARSENIDES
POWER DENSITY
SCHOTTKY BARRIER DIODES
SURFACES