Selective and uniform high rate etching of polysilicon in a magnetically confined microwave discharge
- Univ. of Cincinnati, OH (United States)
An electron cyclotron resonance plasma reactor with multipolar magnetic confinement has been characterized for potential applications in polysilicon gate patterning. A two-step, low pressure, 100% Cl{sub 2} etch process is used, in which a small substrate bias is applied only during the polysilicon etch step. This system etches anisotropic profiles into undoped polysilicon with an etch rate of 4000-4500 {Angstrom}/min and polysilicon-oxide etch selectivities of 150-300. The downstream ion current density and plasma potential are radially uniform to within 1% (1{sigma}) over a 200 mm diam. The polysilicon etch rate is radially uniform to within {plus_minus}2% of the mean etch rate across a 150 mm wafer. 20 refs., 15 figs., 4 tabs.
- OSTI ID:
- 249824
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 2 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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Poly-Si etching using electron cyclotron resonance microwave plasma sources with multipole confinement
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