Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

Yang, Zhongshu; Basnet, Rabin; Samundsett, Chris; Phang, Sieu Pheng; Truong, Thien; Kang, Di; Liang, Wensheng; Bui, Anh Dinh; Wang, Wei; Le, Tien T.; Macdonald, Daniel; Liu, AnYao

doi:10.1002/pip.3873

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

Journal Article · Tue Nov 26 00:00:00 EST 2024 · Progress in Photovoltaics

DOI:https://doi.org/10.1002/pip.3873· OSTI ID:2497735

^[1]; Basnet, Rabin ^[1]; Samundsett, Chris ^[1]; Phang, Sieu Pheng ^[1]; Truong, Thien ^[2]; Kang, Di ^[1]; Liang, Wensheng ^[1]; ^[1]; Wang, Wei ^[1]; ^[1]; Macdonald, Daniel ^[1]; ^[1]

Australian National Univ., Canberra, ACT (Australia)
Australian National Univ., Canberra, ACT (Australia); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Over the past decade, silicon solar cells with carrier-selective passivating contacts based on polysilicon capping an ultra-thin silicon oxide (commonly known as TOPCon or POLO) have demonstrated promising efficiency potentials and are regarded as an evolutionary upgrade to the PERC (passivated emitter and rear contact) cells in manufacturing. The polysilicon-based passivating contacts also exhibit excellent gettering effects that relax the wafer and cleanroom requirements to some extent. Here, in this work, we experimentally explore the impact of bulk iron contamination and polysilicon gettering on the passivation quality of the polysilicon/oxide structure and the resulting solar cells performance. Results show that both n- and p-type polysilicon/oxide passivating contacts are not affected by iron gettering, demonstrating robust and stable passivation quality. However, for a very high bulk iron contamination (1 × 10¹³ cm⁻³), the accumulated iron in the p-type lightly boron-doped emitter in crystalline silicon would degrade the emitter saturation current density. This can cause a reduction in both open-circuit voltage and short-circuit current. Meanwhile, this very high iron content (1 × 10¹³ cm⁻³) can further degrade the fill factor and temperature coefficient of the cells. On the other hand, for an initial iron content of 2 × 10¹² cm⁻³, which should be well above the iron level in the current industrial Czochralski silicon wafers, the resulting cells demonstrate similar performance as the control group with no intentional iron contamination. This work brings attention to both the benefits of polysilicon gettering effects as well as the potential degradation due to the accumulation of metal impurities in the p-type emitter region.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2497735

Report Number(s):: NREL/JA--5K00-92630

Journal Information:: Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 3 Vol. 33; ISSN 1062-7995; ISSN 1099-159X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

References (64)

Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes Macdonald, Daniel; Cuevas, Andres Progress in Photovoltaics: Research and Applications, Vol. 8, Issue 4 https://doi.org/10.1002/1099-159X(200007/08)8:4<363::AID-PIP328>3.0.CO;2-Y	journal	January 2000
Impact of Metal Contamination in Silicon Solar Cells Coletti, Gianluca; Bronsveld, Paula C. P.; Hahn, Giso Advanced Functional Materials, Vol. 21, Issue 5 https://doi.org/10.1002/adfm.201000849	journal	February 2011
Impurity Gettering in Polycrystalline‐Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes Yang, Zhongshu; Krügener, Jan; Feldmann, Frank Advanced Energy Materials, Vol. 12, Issue 24 https://doi.org/10.1002/aenm.202103773	journal	May 2022
Impact of phosphorus gettering parameters and initial iron level on silicon solar cell properties Vähänissi, Ville; Haarahiltunen, Antti; Talvitie, Heli Progress in Photovoltaics: Research and Applications, Vol. 21, Issue 5 https://doi.org/10.1002/pip.2215	journal	May 2012
Impact of bulk impurity contamination on the performance of high-efficiency n -type silicon solar cells Richter, Armin; Benick, Jan; Fell, Andreas Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 5 https://doi.org/10.1002/pip.2990	journal	January 2018
Temperature sensitivity maps of silicon wafers from photoluminescence imaging: The effect of gettering and hydrogenation Nie, Shuai; Chin, Robert Lee; Soufiani, Arman Mahboubi Progress in Photovoltaics: Research and Applications, Vol. 30, Issue 11 https://doi.org/10.1002/pip.3579	journal	May 2022
General temperature dependence of solar cell performance and implications for device modelling Green, Martin A. Progress in Photovoltaics: Research and Applications, Vol. 11, Issue 5 https://doi.org/10.1002/pip.496	journal	January 2003
Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells Hayes, Maxim; Martel, Benoit; Alam, Giri Wahyu physica status solidi (a), Vol. 216, Issue 17 https://doi.org/10.1002/pssa.201900321	journal	July 2019
On the Influence of the SiN_x Composition on the Firing Stability of Poly‐Si/SiN_x Stacks Steinhauser, Bernd; Feldmann, Frank; Ourinson, Daniel physica status solidi (a), Vol. 217, Issue 21 https://doi.org/10.1002/pssa.202000333	journal	September 2020
Impurity Gettering by Atomic‐Layer‐Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures Liu, AnYao; Macdonald, Daniel physica status solidi (RRL) – Rapid Research Letters, Vol. 12, Issue 3 https://doi.org/10.1002/pssr.201700430	journal	December 2017
Hydrogenation Mechanisms of Poly‐Si/SiO _x Passivating Contacts by Different Capping Layers Truong, Thien N.; Yan, Di; Chen, Wenhao Solar RRL, Vol. 4, Issue 3 https://doi.org/10.1002/solr.201900476	journal	November 2019
Reevaluation of Photoluminescence Intensity as an Indicator of Efficiency in Perovskite Solar Cells Campanari, Valerio; Martelli, Faustino; Agresti, Antonio Solar RRL, Vol. 6, Issue 8 https://doi.org/10.1002/solr.202200049	journal	May 2022
Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells Yang, Zhongshu; Krügener, Jan; Feldmann, Frank Solar RRL, Vol. 7, Issue 8 https://doi.org/10.1002/solr.202200578	journal	August 2022
Investigating Wafer Quality in Industrial Czochralski‐Grown Gallium‐Doped p‐Type Silicon Ingots with Melt Recharging Basnet, Rabin; Sun, Chang; Le, Tien Solar RRL, Vol. 7, Issue 15 https://doi.org/10.1002/solr.202300304	journal	June 2023
Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects Le, Tien; Cai, Yalun; Yang, Zhongshu Solar RRL, Vol. 8, Issue 6 https://doi.org/10.1002/solr.202300928	journal	December 2023
Thermal Behavior of Photovoltaic Devices Dupré, Olivier; Vaillon, Rodolphe; Green, Martin A. Springer Cham https://doi.org/10.1007/978-3-319-49457-9	book	January 2017
Transition metals in silicon Weber, Eicke R. Applied Physics A Solids and Surfaces, Vol. 30, Issue 1 https://doi.org/10.1007/BF00617708	journal	January 1983
Iron and its complexes in silicon Istratov, A. A.; Hieslmair, H.; Weber, E. R. Applied Physics A: Materials Science & Processing, Vol. 69, Issue 1 https://doi.org/10.1007/s003390050968	journal	July 1999
Polysilicon passivated junctions: The next technology for silicon solar cells? Yan, Di; Cuevas, Andres; Michel, Jesús Ibarra Joule, Vol. 5, Issue 4 https://doi.org/10.1016/j.joule.2021.02.013	journal	April 2021
Metal induced crystallization of amorphous silicon for photovoltaic solar cells Van Gestel, D.; Gordon, I.; Poortmans, J. Physics Procedia, Vol. 11 https://doi.org/10.1016/j.phpro.2011.01.003	journal	January 2011
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation Richter, Armin; Benick, Jan; Feldmann, Frank Solar Energy Materials and Solar Cells, Vol. 173 https://doi.org/10.1016/j.solmat.2017.05.042	journal	December 2017
Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells Krügener, Jan; Haase, Felix; Rienäcker, Michael Solar Energy Materials and Solar Cells, Vol. 173 https://doi.org/10.1016/j.solmat.2017.05.055	journal	December 2017
Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells Liu, AnYao; Yan, Di; Phang, Sieu Pheng Solar Energy Materials and Solar Cells, Vol. 179 https://doi.org/10.1016/j.solmat.2017.11.004	journal	June 2018
Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells Haase, Felix; Hollemann, Christina; Schäfer, Sören Solar Energy Materials and Solar Cells, Vol. 186 https://doi.org/10.1016/j.solmat.2018.06.020	journal	November 2018
Studying dopant diffusion from Poly-Si passivating contacts Feldmann, Frank; Schön, Jonas; Niess, Jürgen Solar Energy Materials and Solar Cells, Vol. 200 https://doi.org/10.1016/j.solmat.2019.109978	journal	September 2019
Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique Wang, Zhixue; Liu, Zunke; Liao, Mingdun Solar Energy Materials and Solar Cells, Vol. 206 https://doi.org/10.1016/j.solmat.2019.110256	journal	March 2020
Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts Polzin, Jana-Isabelle; Lange, Stefan; Richter, Susanne Solar Energy Materials and Solar Cells, Vol. 218 https://doi.org/10.1016/j.solmat.2020.110713	journal	December 2020
Temperature-dependent performance of silicon solar cells with polysilicon passivating contacts Tuan Le, Anh Huy; Basnet, Rabin; Yan, Di Solar Energy Materials and Solar Cells, Vol. 225 https://doi.org/10.1016/j.solmat.2021.111020	journal	June 2021
Radiative recombination in silicon photovoltaics: Modeling the influence of charge carrier densities and photon recycling Fell, Andreas; Niewelt, Tim; Steinhauser, Bernd Solar Energy Materials and Solar Cells, Vol. 230 https://doi.org/10.1016/j.solmat.2021.111198	journal	September 2021
Understanding the impurity gettering effect of polysilicon/oxide passivating contact structures through experiment and simulation Liu, AnYao; Yang, Zhongshu; Feldmann, Frank Solar Energy Materials and Solar Cells, Vol. 230 https://doi.org/10.1016/j.solmat.2021.111254	journal	September 2021
P-type poly-Si/SiO contact by aluminium-induced crystallization of amorphous silicon Sharma, Rajiv; Szlufcik, Jozef; Radhakrishnan, Hariharsudan Sivaramakrishnan Solar Energy Materials and Solar Cells, Vol. 234 https://doi.org/10.1016/j.solmat.2021.111416	journal	January 2022
Gettering in silicon photovoltaics: A review Liu, AnYao; Phang, Sieu Pheng; Macdonald, Daniel Solar Energy Materials and Solar Cells, Vol. 234 https://doi.org/10.1016/j.solmat.2021.111447	journal	January 2022
Reassessment of the intrinsic bulk recombination in crystalline silicon Niewelt, T.; Steinhauser, B.; Richter, A. Solar Energy Materials and Solar Cells, Vol. 235 https://doi.org/10.1016/j.solmat.2021.111467	journal	January 2022
Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts Stuckelberger, Josua; Yan, Di; Phang, Sieu Pheng Solar Energy Materials and Solar Cells, Vol. 251 https://doi.org/10.1016/j.solmat.2022.112123	journal	March 2023
Will SiO -pinholes for SiO /poly-Si passivating contact enhance the passivation quality? Yang, Guangtao; Gram, Remon; Procel, Paul Solar Energy Materials and Solar Cells, Vol. 252 https://doi.org/10.1016/j.solmat.2023.112200	journal	April 2023
Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers Madumelu, Chukwuka; Cai, Yalun; Hollemann, Christina Solar Energy Materials and Solar Cells, Vol. 253 https://doi.org/10.1016/j.solmat.2023.112245	journal	May 2023
Effect of metal impurities concentration on electrical properties in N-type Recharged-Czochralski silicon Hu, Zhiqiang; Cong, Mu; Zhang, Xinyu Solar Energy Materials and Solar Cells, Vol. 260 https://doi.org/10.1016/j.solmat.2023.112482	journal	September 2023
Detailed loss analysis of 24.8% large-area screen-printed n-type solar cell with polysilicon passivating contact Zheng, Peiting; Yang, Jie; Wang, Zhao Cell Reports Physical Science, Vol. 2, Issue 10 https://doi.org/10.1016/j.xcrp.2021.100603	journal	October 2021
Firing-Stable PECVD SiO_xN_y/n-Poly-Si Surface Passivation for Silicon Solar Cells Stöhr, Maximilian; Aprojanz, Johannes; Brendel, Rolf ACS Applied Energy Materials, Vol. 4, Issue 5 https://doi.org/10.1021/acsaem.1c00265	journal	April 2021
Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts Kang, Di; Sio, Hang Cheong; Stuckelberger, Josua ACS Applied Materials & Interfaces, Vol. 13, Issue 46 https://doi.org/10.1021/acsami.1c17342	journal	November 2021
Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data Sinton, Ronald A.; Cuevas, Andres Applied Physics Letters, Vol. 69, Issue 17 https://doi.org/10.1063/1.117723	journal	October 1996
Iron solubility in highly boron-doped silicon McHugo, S. A.; McDonald, R. J.; Smith, A. R. Applied Physics Letters, Vol. 73, Issue 10 https://doi.org/10.1063/1.121964	journal	September 1998
Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures Kononchuk, O.; Korablev, K. G.; Yarykin, N. Applied Physics Letters, Vol. 73, Issue 9 https://doi.org/10.1063/1.122128	journal	August 1998
Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping Macdonald, D. H.; Geerligs, L. J.; Azzizi, A. Journal of Applied Physics, Vol. 95, Issue 3 https://doi.org/10.1063/1.1637136	journal	February 2004
Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon Macdonald, Daniel; Deenapanray, Prakash N. K.; Diez, Stephan Journal of Applied Physics, Vol. 96, Issue 7 https://doi.org/10.1063/1.1789630	journal	October 2004
Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon Macdonald, Daniel; Geerligs, L. J. Applied Physics Letters, Vol. 85, Issue 18 https://doi.org/10.1063/1.1812833	journal	November 2004
Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers Macdonald, D.; Mäckel, H.; Cuevas, A. Applied Physics Letters, Vol. 88, Issue 9 https://doi.org/10.1063/1.2181199	journal	February 2006
Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon Macdonald, D.; Roth, T.; Deenapanray, P. N. K. Applied Physics Letters, Vol. 89, Issue 14 https://doi.org/10.1063/1.2358126	journal	October 2006
Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence Macdonald, D.; Tan, J.; Trupke, T. Journal of Applied Physics, Vol. 103, Issue 7 https://doi.org/10.1063/1.2903895	journal	April 2008
A fast, preparation‐free method to detect iron in silicon Zoth, G.; Bergholz, W. Journal of Applied Physics, Vol. 67, Issue 11 https://doi.org/10.1063/1.345063	journal	June 1990
Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon Phang, S. P.; Macdonald, D. Journal of Applied Physics, Vol. 109, Issue 7 https://doi.org/10.1063/1.3569890	journal	April 2011
Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation Schenk, Andreas Journal of Applied Physics, Vol. 84, Issue 7 https://doi.org/10.1063/1.368545	journal	October 1998
Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films Liu, A. Y.; Sun, C.; Markevich, V. P. Journal of Applied Physics, Vol. 120, Issue 19 https://doi.org/10.1063/1.4967914	journal	November 2016
Excess oxygen limited diffusion and precipitation of iron in amorphous silicon dioxide Leveneur, J.; Langlois, M.; Kennedy, J. Journal of Applied Physics, Vol. 122, Issue 13 https://doi.org/10.1063/1.4985819	journal	October 2017
Hydrogen passivation of poly-Si/SiO _x contacts for Si solar cells using Al ₂ O ₃ studied with deuterium Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William Applied Physics Letters, Vol. 112, Issue 20 https://doi.org/10.1063/1.5031118	journal	May 2018
First-principles calculations of iron-hydrogen reactions in silicon Santos, Paulo; Coutinho, José; Öberg, Sven Journal of Applied Physics, Vol. 123, Issue 24 https://doi.org/10.1063/1.5039647	journal	June 2018
Various impacts of firing temperature on crystalline silicon Fischer, Christian; Zuschlag, Annika; Hahn, Giso AIP Conference Proceedings https://doi.org/10.1063/5.0143430	conference	January 2023
Current status and challenges for hole-selective poly-silicon based passivating contacts Basnet, Rabin; Yan, Di; Kang, Di Applied Physics Reviews, Vol. 11, Issue 1 https://doi.org/10.1063/5.0185379	journal	February 2024
Statistics of the Recombinations of Holes and Electrons Shockley, W.; Read, W. T. Physical Review, Vol. 87, Issue 5 https://doi.org/10.1103/PhysRev.87.835	journal	September 1952
Impurity-Related Limitations of Next-Generation Industrial Silicon Solar Cells Schmidt, Jan; Lim, Bianca; Walter, Dominic IEEE Journal of Photovoltaics, Vol. 3, Issue 1 https://doi.org/10.1109/JPHOTOV.2012.2210030	journal	January 2013
Interdigitated Back Passivated Contact (IBPC) Solar Cells Formed by Ion Implantation Young, David L.; Nemeth, William; LaSalvia, Vincenzo IEEE Journal of Photovoltaics, Vol. 6, Issue 1 https://doi.org/10.1109/JPHOTOV.2015.2483364	journal	January 2016
Efficiency Roadmap for Evolutionary Upgrades of PERC Solar Cells by TOPCon: Impact of Parasitic Absorption Messmer, Christoph; Fell, Andreas; Feldmann, Frank IEEE Journal of Photovoltaics, Vol. 10, Issue 2 https://doi.org/10.1109/JPHOTOV.2019.2957642	journal	March 2020
Impact of Depth-Wise Inhomogeneous Iron Distributions on the Accuracy of Lifetime-Based Interstitial Iron Measurements on Silicon Wafers Le, Tien T.; Phang, Sieu Pheng; Yang, Zhongshu IEEE Journal of Photovoltaics, Vol. 13, Issue 4 https://doi.org/10.1109/JPHOTOV.2023.3261549	journal	July 2023
Interpretation of the Commonly Observed I-V Characteristics of C-SI Cells Having Ideality Factor Larger Than Two Breitenstein, O.; Altermatt, P.; Ramspeck, K. 2006 IEEE 4th World Conference on Photovoltaic Energy Conference https://doi.org/10.1109/WCPEC.2006.279597	conference	January 2006

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14 SOLAR ENERGY
SOLAR ENERGY
impurity gettering
iron contamination
polysilicon
silicon solar cell

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

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