Theory of optical interband transitions in strained Si{sub 1{minus}{ital y}}C{sub {ital y}} grown pseudomorphically on Si (001)

Journal Article · Sun Oct 15 00:00:00 EDT 1995 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.359696· OSTI ID:249398

Zollner, S ^[1]

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1. Ames Laboratory (US-DOE) and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)

Recently W. Kissinger, M. Weidner, H. J. Osten, and M. Eichler [Appl. Phys. Lett. {bold 65}, 3356 (1994)] reported ellipsometry and electroreflectance measurements on the {ital E}{sub 0}, {ital E}{sub 1}, and {ital E}{sub 2} critical point energies in strained Si{sub 1{minus}{ital y}}C{sub {ital y}} alloys grown pseudomorphically on Si (001) using molecular-beam epitaxy. We present a theory explaining these energies using established deformation-potential theory and interpret the results and their implications for the band structure of these alloys. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Ames National Laboratory
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 249398
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY-LEVEL TRANSITIONS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
SILICON ALLOYS
SILICON CARBIDES
STRAINS
THIN FILMS