Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

Journal Article · Sun Aug 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4960449· OSTI ID:22597698

Wang, Wei; Yeo, Yee-Chia ^[1]

---

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

We investigated the compositional dependence of the near-bandgap dielectric function and the E{sub 0} critical point in pseudomorphic Ge{sub 1-x}Sn{sub x} alloys grown on Ge (100) substrate by molecular beam epitaxy. The complex dielectric functions were obtained using spectroscopic ellipsometry from 0.5 to 4.5 eV at room temperature. Analogous to the E{sub 1} and E{sub 1}+Δ{sub 1} transitions, a model consisting of the compositional dependence of relaxed alloys along with the strain contribution predicted by the deformation potential theory fully accounts for the observed compositional dependence in pseudomorphic alloys.

• OSTI ID: 22597698
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 120; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEFORMATION
DIELECTRIC MATERIALS
ELLIPSOMETRY
GERMANIUM ALLOYS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
OPTICAL PROPERTIES
STRAINS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TIN ALLOYS