W, WSi{sub x} and Ti/Al low resistance OHMIC contacts to InGaN, InN and InAlN
- Florida Univ., Gainesville, FL (United States)
- Sandia National Labs., Albuquerque, NM (United States)
W, WSi{sub 0.44} and Ti/Al contacts were examined on n{sup +} In{sub 0.65}Ga{sub 0.35}N, InN and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance ({rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 {degrees}C mainly due to out diffusion of In and N. WSi{sub x} showed an as-deposited {rho}{sub c} of 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to {approximately} 600 {degrees}C ({rho}{sub c} {approximately} 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} at {le}600 {degrees}C). The surfaces of these contacts remain smooth to 800 {degrees}C for W and WSi{sub x} and 650 {degrees}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with {rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2} and for WSi{sub x} {rho}{sub c} {approximately} 10{sup {minus}6} {Omega} {center_dot}cm{sup 2}. All remained smooth to {approximately} 600 {degrees}C, but exhibited significant interdiffusion of In, N, W and Ti respectively at higher temperatures. The contact resistances for all three metalization schemes were {ge} 10{sup {minus}4} {Omega} {center_dot}cm{sup 2} on InAlN, and degrades with subsequent annealing. The Ti/Al was found to react with the InAlN above 400 {degrees}C, causing the contact resistance to increase rapidly. W and WSi{sub x} proved to be more stable with {rho}{sub c} {approximately} 10{sup {minus}2} and 10{sup {minus}3} {Omega} {center_dot}cm{sup 2} up to 650 {degrees}C and 700 {degrees}C respectively.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 248579
- Report Number(s):
- SAND-96-1392C; CONF-960401-49; ON: DE96011851; CNN: NSF Grant DMR-9421109; ONR Grant N00014-92-J-1895
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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