Thermal stability of W, WSi{sub {ital x}}, and Ti/Al ohmic contacts to InGaN, InN, and InAlN

Journal Article · Thu Oct 31 23:00:00 EST 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588791· OSTI ID:399786

Vartuli, C B; Pearton, S J; Abernathy, C R; MacKenzie, J D ^[1]; Shul, R J; Zolper, J C; Lovejoy, M L; Baca, A G; Hagerott-Crawford, M ^[2]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

W, WSi{sub 0.44}, and Ti/Al contact properties were examined on {ital n}{sup +}In{sub 0.65}Ga{sub 0.35}N, InN, and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance (d{sub {ital c}}{approximately}10{sup {minus}7} {Omega}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor occurring at 900{degree}C mainly due to out diffusion of In and N. WSi{sub {ital x}} showed an as-deposited d{sub {ital c}} of 4{times}10{sup {minus}7} {Omega}cm{sup 2} but this degraded significantly with subsequent annealing at {ge}600{degree}C. Ti/Al contacts were stable to {approximately}600{degree}C (d{sub {ital c}}{approximately}4{times}10{sup {minus}7} {Omega}cm{sup 2} at {le}600{degree}C). The surfaces of these contacts remained smooth to 800{degree}C for W and WSi{sub {ital x}} and 650{degree}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with d{sub {ital c}}{approximately}10{sup {minus}7} {Omega}cm{sup 2} and for WSi{sub {ital xd}}{sub {ital c}}{approximately}10{sup {minus}6} {Omega}cm{sup 2}. All remained smooth to {approximately}600{degree}C, but exhibited significant interdiffusion of In, N, W, and Ti, respectively, at higher temperatures. The contact resistances for all three metalization schemes were {ge}10{sup {minus}4} {Omega}cm{sup 2} on InAlN, and degraded with subsequent annealing. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 399786
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 14; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM NITRIDES
ANNEALING
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
GALLIUM NITRIDES
INDIUM NITRIDES
INTERFACES
METALLIZATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THERMODYNAMIC PROPERTIES
TITANIUM
TUNGSTEN
TUNGSTEN SILICIDES