Solution-Based Synthesis of Ultrathin Quasi-2D Amorphous Carbon for Nanoelectronics

Conference · Sun Dec 01 04:00:00 EST 2024

DOI:https://doi.org/10.2172/2479102· OSTI ID:2479102

Pham, Viet Hung ^[1]; Wang, Congjun ^[2]; Lee, Junseok ^[1]; Weidman, Jennifer ^[1]; Natesakhawat, Sittichai ^[1]; Matranga, Christopher ^[2]

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1. NETL Site Support Contractor, National Energy Technology Laboratory
2. NETL

The synthesis of ultrathin 2D amorphous dielectric film represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.

• Research Organization: National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV, and Albany, OR (United States)
• Sponsoring Organization: USDOE Office of Fossil Energy and Carbon Management (FECM); USDOE Office of Fossil Energy and Carbon Management (FECM), Office of Resource Sustainability (FE-30)
• OSTI ID: 2479102
• Country of Publication: United States
• Language: English