Characterization of High-Temperature SiPM Noise

Conference · Mon Oct 21 04:00:00 EDT 2024

DOI:https://doi.org/10.2172/2476665· OSTI ID:2476665

Fritchie, Jacob ^[1]; Di Fulvio, Angela ^[1]; Balajthy, Jon ^[1]

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1. Department of Nuclear, Plasma, and Radiological Engineering, Grainger College of Engineering, University of Illinois at Urbana-Champaign, Sandia National Laboratories

Introduction • Background: Silicon photomultipliers (SiPMs) are compact, low-power, and high-efficiency detectors that are increasingly used in radiation detection applications like medical imaging and nuclear safeguards. The have advantages of PMTs because they are smaller, operate at lower voltages, and offer high photon detection efficiency. • Challenges: SiPMs suffer from increased dark count rate (DCR) and optical crosstalk (OCT), which degrades performance. • Purpose of study: This study compares the Advansid ASD-NUV3S-P-40, Broadcom AFBR-S4K33C0147L, and Onsemi MicroFJ-30035-TSVTR under four different temperatures to compare their performance in harsh environments.

• Research Organization: SRS
• Sponsoring Organization: DOE; EM
• DOE Contract Number: 89303321CEM000080
• OSTI ID: 2476665
• Report Number(s): SRNL-STI-2024-00537
• Country of Publication: United States
• Language: English