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High-fidelity parallel entangling gates on a neutral-atom quantum computer

Journal Article · · Nature (London)
 [1];  [2];  [2];  [2];  [2];  [3];  [2];  [2];  [2];  [2];  [4];  [5];  [2];  [6];  [2]
  1. Harvard Univ., Cambridge, MA (United States); OSTI
  2. Harvard Univ., Cambridge, MA (United States)
  3. Harvard Univ., Cambridge, MA (United States); QuEra Computing Inc., Boston, MA (United States)
  4. AWS Center for Quantum Computing, Pasadena, CA (United States); Harvard Univ., Cambridge, MA (United States)
  5. Harvard Univ., Cambridge, MA (United States). John A. Paulson School of Engineering and Applied Sciences (SEAS)
  6. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

The ability to perform entangling quantum operations with low error rates in a scalable fashion is a central element of useful quantum information processing. Neutral-atom arrays have recently emerged as a promising quantum computing platform, featuring coherent control over hundreds of qubits and any-to-any gate connectivity in a flexible, dynamically reconfigurable architecture. The main outstanding challenge has been to reduce errors in entangling operations mediated through Rydberg interactions. Here we report the realization of two-qubit entangling gates with 99.5% fidelity on up to 60 atoms in parallel, surpassing the surface-code threshold for error correction. Our method uses fast, single-pulse gates based on optimal control, atomic dark states to reduce scattering and improvements to Rydberg excitation and atom cooling. We benchmark fidelity using several methods based on repeated gate applications, characterize the physical error sources and outline future improvements. Finally, we generalize our method to design entangling gates involving a higher number of qubits, which we demonstrate by realizing low-error three-qubit gates. By enabling high-fidelity operation in a scalable, highly connected system, these advances lay the groundwork for large-scale implementation of quantum algorithms, error-corrected circuits and digital simulations.

Research Organization:
Harvard Univ., Cambridge, MA (United States); Krell Institute, Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC); National Science Foundation (NSF); US Army Research Office (ARO); Defense Advanced Research Projects Agency (DARPA)
Grant/Contract Number:
SC0021013; SC0021110
OSTI ID:
2472033
Journal Information:
Nature (London), Journal Name: Nature (London) Journal Issue: 7982 Vol. 622; ISSN 0028-0836
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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