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110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

Journal Article · · Scientific Reports

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $$V_πL$$ product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOD; US Department of the Navy, Office of Naval Research (ONR); National Aeronautics and Space Administration (NASA); National Science Foundation (NSF)
Grant/Contract Number:
NA0003525
OSTI ID:
2471760
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 12; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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