Decoherence of $V^{–}_{B}$ spin defects in monoisotopic hexagonal boron nitride

Haykal, A.; Tanos, R.; Minotto, N.; Durand, A.; Fabre, F.; Li, J.; Edgar, J. H.; Ivády, V.; Gali, A.; Michel, T.; Dréau, A.; Gil, B.; Cassabois, G.; Jacques, V.

doi:10.1038/s41467-022-31743-0

Decoherence of $$V^{–}_{B}$$ spin defects in monoisotopic hexagonal boron nitride

Journal Article · Wed Jul 27 00:00:00 EDT 2022 · Nature Communications

DOI:https://doi.org/10.1038/s41467-022-31743-0· OSTI ID:2470416

^[1]; Tanos, R. ^[1]; Minotto, N. ^[1]; ^[1]; Fabre, F. ^[1]; ^[2]; ^[2]; Ivády, V. ^[3]; ^[4]; Michel, T. ^[1]; Dréau, A. ^[1]; ^[1]; Cassabois, G. ^[1]; ^[1]

Montpellier Univ. (France); Centre National de la Recherche Scientifique (CNRS) (France)
Kansas State Univ., Manhattan, KS (United States)
Max Planck Society, Dresden (Germany). Max Planck Inst. for the Physics of Complex Systems; Linköping Univ. (Sweden)
Wigner Research Center for Physics, Budapest (Hungary); Budapest Univ. of Technology and Economics (Hungary)

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either ¹⁰B or ¹¹B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first confirm that it corresponds to the negatively charged boron-vacancy center ($$V^{–}_{B}$$). We then show that its spin coherence properties are slightly improved in 10B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using cross-relaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of $$V^{–}_{B}$$ spin defects, which are valuable for the future development of hBN-based quantum sensing foils.

View Accepted Manuscript (DOE)

Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 2470416

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 13; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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