Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride

Durand, A.; Clua-Provost, T.; Fabre, F.; Kumar, P.; Li, J.; Edgar, J. H.; Udvarhelyi, P.; Gali, A.; Marie, X.; Robert, C.; Gérard, J. M.; Gil, B.; Cassabois, G.; Jacques, Vincent

doi:10.1103/physrevlett.131.116902

Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride

Journal Article · Thu Sep 14 00:00:00 EDT 2023 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.131.116902· OSTI ID:2424233

Durand, A. ^[1]; Clua-Provost, T. ^[1]; Fabre, F. ^[1]; Kumar, P. ^[1]; Li, J. ^[2]; Edgar, J. H. ^[2]; ^[3]; Gali, A. ^[3]; ^[4]; Robert, C. ^[4]; ^[5]; Gil, B. ^[1]; ^[1]; ^[1]

Université de Montpellier and CNRS (France)
Kansas State University, KS (United States)
University of Technology and Economics, Budapest (Hungary)
Université de Toulouse (France)
Univ. Grenoble Alpes (France)

Optically active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this Letter, we first demonstrate that the electron spin resonance frequencies of boron vacancy centers ($$V$$$^{–}_{B}$$) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of $$V$$$^{–}_{B}$$ centers with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically induced spin polarization rate and (iii) the longitudinal spin relaxation time. Furthermore, this Letter provides important insights into the properties of $$V$$$^{–}_{B}$$ centers embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.

View Accepted Manuscript (DOE)

Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE; Office of Naval Research (ONR)

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 2424233

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 11 Vol. 131; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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