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Atomic resolution scanning transmission electron microscopy at liquid helium temperatures for quantum materials

Journal Article · · Ultramicroscopy
 [1];  [2];  [3];  [3];  [4];  [1];  [5];  [1];  [1]
  1. Brookhaven National Laboratory (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  2. Brookhaven National Laboratory (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States)
  3. Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  4. Gatan Inc., Pleasanton, CA (United States)
  5. Rutgers Univ., Piscataway, NJ (United States)

Fundamental quantum phenomena in condensed matter, ranging from correlated electron systems to quantum information processors, manifest their emergent characteristics and behaviors predominantly at low temperatures. This necessitates the use of liquid helium (LHe) cooling for experimental observation. Atomic resolution scanning transmission electron microscopy combined with LHe cooling (cryo-STEM) provides a powerful characterization technique to probe local atomic structural modulations and their coupling with charge, spin and orbital degrees-of-freedom in quantum materials. However, achieving atomic resolution in cryo-STEM is exceptionally challenging, primarily due to sample drifts arising from temperature changes and noises associated with LHe bubbling, turbulent gas flow, etc. In this work, we demonstrate atomic resolution cryo-STEM imaging at LHe temperatures using a commercial side-entry LHe cooling holder. Firstly, we examine STEM imaging performance as a function of He gas flow rate, identifying two primary noise sources: He-gas pulsing and He-gas bubbling. Secondly, we propose two strategies to achieve low noise conditions for atomic resolution STEM imaging: either by temporarily suppressing He gas flow rate using the needle valve or by acquiring images during the natural warming process. Lastly, we show the applications of image acquisition methods and image processing techniques in investigating structural phase transitions in Cr2Ge2Te6, CuIr2S4, and CrCl3. In conclusion, our findings represent an advance in the field of atomic resolution electron microscopy imaging for quantum materials and devices at LHe temperatures, which can be applied to other commercial side-entry LHe cooling TEM holders.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
SC0012704; FG02-07ER46382
OSTI ID:
2466136
Alternate ID(s):
OSTI ID: 2447170
Report Number(s):
BNL--226246-2024-JAAM
Journal Information:
Ultramicroscopy, Journal Name: Ultramicroscopy Vol. 267; ISSN 0304-3991
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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