Molecular dynamics simulations of direct reactive ion etching: Surface roughening of silicon by chlorine
Journal Article
·
· IEEE Transactions on Plasma Science
- Univ. of California, Berkeley, CA (United States). College of Chemistry
During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl{sup +}. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated.
- OSTI ID:
- 244927
- Journal Information:
- IEEE Transactions on Plasma Science, Journal Name: IEEE Transactions on Plasma Science Journal Issue: 1 Vol. 24; ISSN ITPSBD; ISSN 0093-3813
- Country of Publication:
- United States
- Language:
- English
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