Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions

Journal Article · Wed Oct 01 04:00:00 EDT 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365674· OSTI ID:542548

Hanson, D E; Voter, A F; Kress, J D ^[1]

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1. Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We report results from molecular dynamics simulations of the etching of a Si surface by energetic Cl atoms (15eV{le}E{le}200eV). We find that the energy dependence of the Si yield (number of Si atoms desorbed per incident Cl ion) is in reasonable agreement with recent experiments and with previous simulations performed up to 50 eV. We also investigate the variation of the Si yield with the impact angle of incidence, the stoichiometry of the desorbed material, and the effect of a thermal background Cl flux to the surface in the presence of an ion flux at 50 eV. Surface roughening due to etching was observed and the calculated rms roughness is in reasonable agreement with experiments. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 542548
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
CHLORINE IONS
ENERGY DEPENDENCE
ETCHING
EV RANGE
MOLECULAR DYNAMICS METHOD
ROUGHNESS
SILICON
SIMULATION
SPUTTERING
STOICHIOMETRY