Properties of ZnSe crystals doped with phosphorus

Journal Article · Sun Oct 01 04:00:00 EDT 1995 · Inorganic Materials

OSTI ID:244229

Makhnii, E V; Mel`nik, V V ^[1]

---

1. Fed`kovich State Univ., Chernovtsy (Ukraine)

Preparation of ZnSe crystals that would exhibit hole conduction and dominant edge luminescence at 300 K is vital for optoelectronic applications. To solve this problem, several interrelated methods for producing p-type conductivity in ZnSe are now used: ion implantation of Group I and V elements, annealing in elemental Se vapor molecular beam epitaxy, and annealing in Se melt with Li additions. Doping of n-type ZnSe crystals with acceptor impurities via high-temperature diffusion is not utilized for this purpose, first, because it provides relatively low hole conductivity and, second, because the resultant crystals exhibit mainly long-wavelength, red-orange emission at 300 K. At the same time, the results presented demononstrate that, under certain conditions, the diffusion method can be used to obtain p-type ZnSe with fairly intense edge emission.

• OSTI ID: 244229
• Journal Information: Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 10 Vol. 31; ISSN INOMAF; ISSN 0020-1685
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANNEALING
ARRHENIUS EQUATION
CHARGE CARRIERS
DOPED MATERIALS
HOLES
LUMINESCENCE
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
ZINC SELENIDES