Output Capacitance Loss of GaN HEMTs in Steady-State Switching

Song, Qihao; Zhang, Ruizhe; Li, Qiang; Zhang, Yuhao

doi:10.1109/tpel.2023.3279308

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

Journal Article · Thu May 23 00:00:00 EDT 2024 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/tpel.2023.3279308· OSTI ID:2441267

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Virginia Polytechnic Institute and State Universitu (Virginia Tech), Blacksburg, VA (United States); Virginia Polytechnic Institute and State University
Virginia Polytechnic Institute and State Universitu (Virginia Tech), Blacksburg, VA (United States)

The output capacitance (C_OSS) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C_OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C_OSS loss in a single pulse and the steady-state switching. The C_OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C_OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C_OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C_OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C_OSS loss.1

View Accepted Manuscript (DOE)

Research Organization:: Virginia Polytechnic Institute and State Universitu (Virginia Tech), Blacksburg, VA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0006521

OSTI ID:: 2441267

Journal Information:: IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 5 Vol. 39; ISSN 0885-8993

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Gallium nitride
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output capacitance loss
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Output Capacitance Loss of GaN HEMTs in Steady-State Switching

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